Abstract: Disclosed herein are mass spectrometers having segmented electrodes and associated methods. According to an aspect, an apparatus or mass spectrometer includes an ion source configured to generate ions from a sample. The apparatus also includes a detector configured to detect a plurality of mass-to-charge ratios associated with the ions. Further, the apparatus includes segmented electrodes positioned between the ion source and the detector. The apparatus also includes a controller configured to selectively apply a voltage across the segmented electrodes for forming a predetermined electric field profile.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for compound-specific coding mass spectrometry wherein compound-specific masks/codes are positioned between an ion source and detector of a mass spectrometer.

Abstract: Aspects of the present disclosure describe systems, methods, and structures for compound-specific coding mass spectrometry wherein compound-specific masks/codes are positioned between an ion source and detector of a mass spectrometer.

Abstract: An opposed dipole magnet assembly is provided that exhibits higher magnetic field uniformity than traditional magnet assemblies, such as H-shaped magnet assemblies. The opposed dipole magnet assembly includes two permanent magnets that are spaced apart and oriented such that their respective magnetization directions are parallel. Plates formed of a high permeability material are attached to top and bottom surfaces of the two permanent magnets so as to form a hollow field region. With this geometry, the magnetic field in the hollow field region is in a direction antiparallel to the magnetic field directions of the two permanent magnets.

Abstract: Disclosed herein are mass spectrometers having segmented electrodes and associated methods. According to an aspect, an apparatus or mass spectrometer includes an ion source configured to generate ions from a sample. The apparatus also includes a detector configured to detect a plurality of mass-to-charge ratios associated with the ions. Further, the apparatus includes segmented electrodes positioned between the ion source and the detector. The apparatus also includes a controller configured to selectively apply a voltage across the segmented electrodes for forming a predetermined electric field profile.

Abstract: Methods of forming an electrically conductive layer on a flexible substrate, such as a stretchable electrode, by aerosol jet printing on the flexible substrate while the substrate is strained. In general, a stretchable substrate is initially deformed so that a first surface thereof is under tension. While the substrate is in the strained state, an ink is aerosol jet printed onto the first surface. The ink includes carbon nanotubes, and advantageously other materials such as reduced graphene oxide. Further, while the substrate is still in the strained state, the ink is cured after its application to the substrate. Thereafter, the strain is decreased so that the stretchable substrate contracts, self-organizing into a configuration wherein the substrate's first surface, with the cured ink thereon, has a wrinkled profile. The flexible substrate can then be mechanically expanded and contracted, advantageously repeatedly, with the ink layer maintaining electrical conductivity.

Abstract: An electrode for solar conversion including a porous structure configured to contain therein at least one of a catalyst, a chromophore, and a redox couple. The porous structure has a set of electrically conductive nanoparticles adjoining each other. The set of electrically conductive nanoparticles forms a meandering electrical path connecting the nanoparticles together. The porous structure has an atomic layer by layer deposited semiconductive coating disposed conformally on the electrically conductive nanoparticles to form an exterior surface for reception of charge carriers.

Abstract: A coded mass spectrometer incorporates a spatial or temporal code to reduce the resolution/sensitivity dichotomy inherent in mass spectrometry. The code is used to code one or more portions of a mass spectrometer. Coding patterns, such as Hadamard codes, Walsh codes, and perfect code sequences can be used. The coding can be spatial, for example, by using an aperture mask and/or temporal, for example, by coded injection of ions for analysis.

Abstract: A method for making an oriented diamond film includes the steps of saturating a surface region of a transition metal substrate, capable of dissolving carbon, with carbon and hydrogen; forming oriented diamond nuclei on the saturated surface region of the substrate; and growing diamond on the oriented diamond nuclei to form the oriented diamond film. It is theorized that the saturation forms transition metal-carbon-hydrogen surface states (Metal.sub.x --C.sub.y --H.sub.z, where x+y+z=1) on the transition metal substrate while suppressing formation of graphite. Diamond may then be deposited onto the oriented diamond nuclei by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof.

Abstract: An electron beam device includes a diamond layer positioned downstream from and in the path of an electron beam. This diamond layer has a conductance that is responsive to the electron beam. Two electrical contacts on the diamond layer provide connections to a power source and a load. When the electron beam is on, the diamond layer becomes conductive allowing electrical power to flow from the power source through the diamond layer to the load. Accordingly, the electron beam device can act as a switch, or the electron beam can be modulated to provide an amplifier. The diamond layer is capable of high temperature operation, resists crystal damage, resists corrosion, and provides a high breakdown voltage. At least one of the electrical contacts on the diamond layer preferably comprises a degeneratively doped diamond surface portion.

Abstract: A method for making a field emitter comprising the steps of providing a projection; electrically biasing the projection; and exposing the electrically biased projection to a hydrocarbon containing plasma to form a layer of diamond nuclei on the projection. The diamond nuclei are relatively inert and have a high nucleation density. The projection is preferably a material capable of forming a carbide, such as (111) oriented silicon. Refractory metals may also be used for the projection. The electrical biasing is preferably at a voltage in a range of about -150 to -250 volts. The hydrocarbon containing plasma preferably comprises a plasma including about 2 to 5% by weight of methane in hydrogen. An intervening carbide layer is preferably formed at a surface of the projection and underlying the layer of diamond nuclei. The field emitter produced by the method and having a relatively high diamond nucleation density is also disclosed.

Abstract: A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate.

Abstract: A method for making an oriented diamond film includes the steps of seeding a face of a nondiamond substrate with diamond particles, and orienting the diamond particles with respect to the substrate by heating the seeded substrate to a predetermined temperature and for a predetermined time to dissolve portions of the diamond particles into the substrate while suppressing graphite formation. Diamond may then be deposited onto the oriented diamond particles by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof. For nickel as the substrate material, the temperature for orientation of the diamond particles is preferably about 1200.degree. C., for a time period in the range of about 1 to 15 minutes, and, more preferably, about 1 to 5 minutes.

Abstract: The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a method for making a semiconductor device comprising the steps of providing a layer of a transition metal silicide and forming a semiconducting diamond layer on the layer of transition metal silicide.

Abstract: A method for making an oriented diamond film includes the steps of saturating a surface region of a transition metal substrate, capable of dissolving carbon, with carbon and hydrogen; forming oriented diamond nuclei on the saturated surface region of the substrate; and growing diamond on the oriented diamond nuclei to form the oriented diamond film. It is theorized that the saturation forms transition metal-carbon-hydrogen surface states (Metal.sub.x -C.sub.y --H.sub.z, where x+y+z=1) on the transition metal substrate while suppressing formation of graphite. Diamond may then be deposited onto the oriented diamond nuclei by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof.

Abstract: A microelectronic structure including a plurality of spaced apart diamond structures on which a plurality of semiconductor devices may be formed. The semiconductor devices include a semiconducting diamond layer on each of the diamond structures. The diamond structures are preferably oriented relative to a single crystal nondiamond substrate so that the diamond structures have a (100)-oriented outer face for forming the semiconductor devices thereon. The microelectronic structure may be diced into discrete devices, or the devices interconnected, such as to form a higher powered device. One embodiment of the microelectronic structure includes the plurality of diamond structures, wherein each diamond structure is formed of a highly oriented textured diamond layer approaching single crystal quality, yet capable of fabrication on a single crystal nondiamond substrate.

Abstract: A method and apparatus for enhancing the nucleation of diamond by pretreating a substrate by electrically biasing a diamond film adjacent the substrate while exposing the substrate and the thus biased diamond film to a carbon-containing plasma. The bias pretreatment may be maintained for a time period in the range of about 1 hour to 2 hours to achieve a high diamond nucleation density. Alternatively, the biasing may be continued until diamond film formation is indicated by a change in reflectivity of the surface of the substrate. The biasing pretreating may be used to nucleate diamond heteroepitaxially on a substrate having a surface film formed of a material having a relatively close lattice match to diamond, such as .beta.-silicon carbide. The apparatus includes a laser reflection interferometer to monitor the surface of the substrate.

Abstract: A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide layer forms a substantially chemically non-reactive interface with the polycrystalline diamond. A single layer of substantially stoichiometric proportions of the refractory metal layer is provided in one embodiment of the rectifying contact. Another embodiment includes a second metal-rich refractory metal carbide layer on the stoichiometric layer. Yet another embodiment includes a carbon-rich refractory metal layer between the stoichiometric layer and the polycrystalline diamond layer. A metal field effect transistor including the rectifying contact may also be fabricated.

Abstract: A method for making an oriented diamond film includes the steps of seeding a face of a nondiamond substrate with diamond particles, and orienting the diamond particles with respect to the substrate by heating the seeded substrate to a predetermined temperature and for a predetermined time to dissolve portions of the diamond particles into the substrate while suppressing graphite formation. Diamond may then be deposited onto the oriented diamond particles by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof. For nickel as the substrate material, the temperature for orientation of the diamond particles is preferably about 1200.degree. C., for a time period in the range of about 1 to 15 minutes, and, more preferably, about 1 to 5 minutes.

Abstract: Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.