Abstract: A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.

Abstract: Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurface damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials. In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the host argon matrix. The products of the reaction are gas phase compounds that flow from the surface of the workpiece, exposing fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

Abstract: A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.

Abstract: The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of the plasma can be changed without adjusting the gas flows or swapping out the tool. Once the aperture and tool are in position relative to a workpiece, reactive atom plasma processing can be used to modify the surface of the workpiece, such as to etch, smooth, polish, clean, and/or deposit material onto the workpiece. If necessary, a coolant can be circulated about the aperture. Multiple apertures can also be used to provide a variety of footprint sizes and/or shapes. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.

Abstract: A controllable heat source, such as a laser or flame torch, can be used to pre-heat a portion of the surface of a workpiece, such as a glass optic or semiconductor wafer. Reactive atom plasma (RAP) processing can be used to modify the pre-heated surface portion, as the pre-heated material will more readily chemically combine with the atomic radicals of the precursor in the plasma. A RAP torch, such as an ICP plasma torch, MIP plasma torch, or flame torch, can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the workpiece. The material modified by the torch can substantially correspond to the pattern or portion of the surface that was pre-heated by the heat source. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

Abstract: A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object.

Abstract: A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object.

Abstract: Reactive atom plasma processing (RAP) can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. An improved RAP device utilizes a microwave—induced plasma (MIP) source instead of a conventional ICP torch to modify these surfaces. The use of MIP provides for a smaller footprint, finer detail, simpler and enhanced movement capabilities, lower heat load, fewer shielding requirements, and cheaper construction and operation than ICP.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece.

Abstract: Fabrication apparatus and methods are disclosed for shaping and finishing difficult materials with no subsurface damage. The apparatus and methods use an atmospheric pressure mixed gas plasma discharge as a sub-aperture polisher of, for example, fused silica and single crystal silicon, silicon carbide and other materials. In one example, workpiece material is removed at the atomic level through reaction with fluorine atoms. In this example, these reactive species are produced by a noble gas plasma from trace constituent fluorocarbons or other fluorine containing gases added to the host argon matrix. The products of the reaction are gas phase compounds that flow from the surface of the workpiece, exposing fresh material to the etchant without condensation and redeposition on the newly created surface. The discharge provides a stable and predictable distribution of reactive species permitting the generation of a predetermined surface by translating the plasma across the workpiece along a calculated path.

Abstract: Reactive atom plasma processing can be used to shape, polish, planarize and clean the surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, and/or clean the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from the surface of the workpiece.

Abstract: A composite thin film slider with a protruding R/W device formed by chemical-mechanical polishing to protrude above its substrate and thereby reduce the distance between the R/W device and the recording media. The slider includes a ceramic or non-ceramic substrate with a substantially planar bearing surface, and a R/W device. The R/W device includes an insulator and certain conductive R/W components, deposited onto the substrate's deposit end. The R/W components may include, for example, a magnetic shield layer, a MR stripe layer, and a magnetic pole tip layer, all layered over the deposit end of the substrate. The R/W components protrude from the insulator sufficiently to extend past the substrate's bearing surface. To manufacture this slider, a substrate with the R/W device deposited thereon is polished with a lapping slurry to disproportionately erode the substrate and insulator with respect to the R/W components.

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.