Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: In accordance with one embodiment of the present disclosure, a thermoelectric device includes a plurality of thermoelectric elements that each include a diffusion barrier. The diffusion barrier includes a refractory metal. The thermoelectric device also includes a plurality of conductors coupled to the plurality of thermoelectric elements. The plurality of conductors include aluminum. In addition, the thermoelectric device includes at least one plate coupled to the plurality of thermoelectric elements using a braze. The braze includes aluminum.

Abstract: A thermoelectric module is provided that includes a first thermally conductive plate with a first array of thermoelectric elements coupled to it. The first array of thermoelectric elements includes a first plurality of thermoelectric elements. The thermoelectric module also includes a second thermally conductive plate coupled to the first array of thermoelectric elements, and a second array of thermoelectric elements coupled to the second plate. The second array of thermoelectric elements includes a second plurality of thermoelectric elements. A third thermally conductive plate is coupled to the second array of thermoelectric elements. The thermoelectric module also includes a portion of each thermoelectric element of the first and second pluralities of thermoelectric elements being coplanar with at least a portion of every other thermoelectric element of the first and second pluralities of thermoelectric elements.

Abstract: A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.

Abstract: A method of forming a thermoelectric device includes extruding a P/N-type billet to form a P/N-type extrusion having a first plurality of P-type regions and a first plurality of N-type regions. The P/N-type extrusion is sliced into a plurality of P/N-type wafers. A diffusion barrier metallization is applied to at least a subset of the P-type regions and N-type regions. One side of at least one P/N-type wafer is attached to a temporary substrate. The P/N-type regions of the P/N-type wafer are separated into an array of isolated P-type and N-type elements. The array of elements are coupled to a first plate having a first patterned metallization to form a thermoelectric circuit. The temporary substrate and bonding media may be detached from the P-type and N-type elements. The thermoelectric circuit may be coupled with a second plate at a second end of the thermoelectric circuit, second plate having a second patterned metallization.

Abstract: A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.

Abstract: A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping.

Abstract: A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping.