Abstract: A lamp including a first and second lamp substrate with a first and second external electrode, respectively, and a first and second internal phosphor coating, respectively, wherein the first phosphor coating is a phosphor monolayer. A method of manufacturing a lamp, including screen-printing a phosphor monolayer on a first lamp substrate; screen-printing a phosphor layer on a second lamp substrate; joining the phosphor-coated faces of the first and second lamp substrates together with a seal; and joining a first and second electrode to the uncoupled exterior faces of the first and second lamp substrates, respectively.

Abstract: A lamp including a first and second lamp substrate with a first and second external electrode, respectively, and a first and second internal phosphor coating, respectively, wherein the first phosphor coating is a phosphor monolayer. A method of manufacturing a lamp, including screen-printing a phosphor monolayer on a first lamp substrate; screen-printing a phosphor layer on a second lamp substrate; joining the phosphor-coated faces of the first and second lamp substrates together with a seal; and joining a first and second electrode to the uncoupled exterior faces of the first and second lamp substrates, respectively.

Abstract: A lamp including a first and second lamp substrate with a first and second external electrode, respectively, and a first and second internal phosphor coating, respectively, wherein the first phosphor coating is a phosphor monolayer. A method of manufacturing a lamp, including screen-printing a phosphor monolayer on a first lamp substrate; screen-printing a phosphor layer on a second lamp substrate; joining the phosphor-coated faces of the first and second lamp substrates together with a seal; and joining a first and second electrode to the uncoupled exterior faces of the first and second lamp substrates, respectively.

Abstract: A method of forming a planar emissive device, such as a flat fluorescent lamp or plasma display panel, including the steps of applying a frit paste including spherical spacers onto a broad face of a first planar substrate; setting the frit paste; coupling a second planar substrate to the frit paste; and flowing the frit paste to form a seal between the first and second substrate, wherein the gap size between the first and second substrate is substantially defined by the spacer diameter.

Abstract: A transient voltage surge suppressor (10) is used in a single or poly-phase power distribution network (P). The surge suppressor connects in parallel between each phase (A, B, C) and neutral (N), each phase and electrical ground (G), and between neutral and ground. An improvement comprises an electrical circuit (30) for monitoring the loss of surge protection due to the occurrence of a current surge or voltage transient in a neutral-to-ground path (32). An MOV-type semiconductor (VR1) is connected in the ground-to-neutral path. The semiconductor is normally non-conducting, but switches into conduction when its voltage threshold is exceeded by a surge current or voltage transient. An excessive surge or transient causes the semiconductor to fail. Respective fuses (F1A, F2B) are connected in series with the semiconductor. These fuses clear (blow) upon a semiconductor failure to create an open circuit neutral-to-ground path.

Abstract: A coaxial cable (10) is for use in a power distribution network (N). The cable connects a surge protective device (SPD) in parallel with feeder lines (W1, W2) of the network. The SPD senses voltage surges on the feeder lines and clamps the voltages to a level at which loads (LD) connected downstream of the SPD are protected from excessive voltage levels. An inner conductor (12) and an outer conductor (14) have a dielectric material (16) separating them. The inner conductor is a round conductor, and the outer conductor forms a hollow cylinder in which the inner conductor and insulation material fit. A ratio of the inner diameter (D) of the outer conductor to the diameter (d) of the inner conductor is approximately 1.05. Thus, the diameter of the inner conductor is relatively large compared with the inner diameter of the outer conductor. A relatively large diameter of the inner conductor serves to minimize the dc resistance of the cable. Also, the dielectric material has a permittivity in the range of 2.0-4.0.