Patents by Inventor Jehn-Huar Chem

Jehn-Huar Chem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-pass imaging using image sensors with variably biased channel-stop contacts for identifying defects in a semiconductor die
    Patent number: 10923526
    Abstract: First and second images of a semiconductor die or portion thereof are generated. Generating each image includes performing a respective instance of time-domain integration (TDI) along a plurality of pixel columns in an imaging sensor, while illuminating the imaging sensor with light scattered from the semiconductor die or portion thereof. The plurality of pixel columns comprises pairs of pixel columns in which the pixel columns are separated by respective channel stops. While performing a first instance of TDI to generate the first image, a first bias is applied to electrically conductive contacts of the channel stops. While performing a second instance of TDI to generate the second image, a second bias is applied to the electrically conductive contacts of the channel stops. Defects in the semiconductor die or portion thereof are identified using the first and second images.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: February 16, 2021
    Assignee: KLA Corporation
    Inventors: Tzi-Cheng Lai, Jehn-Huar Chem, Stephen Biellak
  • Anti-reflection layer for back-illuminated sensor
    Patent number: 9748294
    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: August 29, 2017
    Assignees: Hamamatsu Photonics K.K., KLA-Tencor Corporation
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Jehn-Huar Chem, David L. Brown, Yung-Ho Alex Chuang, John Fielden, Venkatraman Iyer
  • Anti-Reflection Layer For Back-Illuminated Sensor
    Publication number: 20150200216
    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
    Type: Application
    Filed: January 7, 2015
    Publication date: July 16, 2015
    Inventors: Masaharu Muramatsu, Hisanori Suzuki, Yasuhito Yoneta, Shinya Otsuka, Jehn-Huar Chem, David L. Brown, Yung-Ho Alex Chuang, John Fielden, Venkatraman Iyer