Patent number: 9954014
Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode.
Type:
Grant
Filed:
August 24, 2016
Date of Patent:
April 24, 2018
Assignee:
LG DISPLAY CO., LTD.
Inventors:
Soyoung Noh, Jinchae Jeon, Seungchan Choi, Junho Lee, Youngjang Lee, Sungbin Ryu, Kitae Kim, Bokyoung Cho, Jeanhan Yoon, Uijin Chung, Jihye Lee, Eunsung Kim, Hyunsoo Shin, Kyeongju Moon, Hyojin Kim, Wonkyung Kim, Jeihyun Lee, Soyeon Je
Publication number: 20170186781
Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs,and the second storage capacitor electrode.
Type:
Application
Filed:
August 24, 2016
Publication date:
June 29, 2017
Applicant:
LG DISPLAY CO., LTD.
Inventors:
Soyoung NOH, Jinchae JEON, Seungchan CHOI, Junho LEE, Youngjang LEE, Sungbin RYU, Kitae KIM, Bokyoung CHO, Jeanhan YOON, Uijin CHUNG, Jihye LEE, Eunsung KIM, Hyunsoo SHIN, Kyeongju MOON, Hyojin KIM, Wonkyung KIM, Jeihyun LEE, Soyeon JE