Abstract: A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate. The crystallization apparatus includes a laser generator, which generates a laser beam, an optical device for changing a path of the laser beam emitted from the laser generating device, and a stage on which the substrate is arranged, wherein the optical device changes the path of the laser beam by rotating with respect to a constant axis, and the stage is moved so that the laser beam having the changed path is irradiated to a constant region on the semiconductor layer.

Abstract: A laser beam mixing apparatus to convert a laser beam bundle into a single laser beam having a uniform energy density. The laser beam mixing apparatus includes: a barrel to adjust a distance between a multi-core optical cable and an optical lens included therein, to convert a laser beam bundle into a single beam; and a stage to adjust the position and angle a single-core optical cable with respect to the optical lens, to align the core of the single-core optical cable with the center of the single beam.

Abstract: A method for performing a laser crystallization is provided. The method includes generating a laser beam, refracting the laser beam to uniformize an intensity of the laser beam at a focal plane of the laser beam. The laser beam whose intensity is uniformized is applied into an object substrate mounted with a stage.

Abstract: Apparatus for uniformizing light amount distribution by shaking line beams along a longitudinal axis direction is provided. The apparatus includes a mirror mount, a mirror, an actuator, and a deformation member. The mirror fixed to the mirror mount and includes a reflective surface. The actuator is disposed at a distance from the mirror mount and configured to repeat expansion and contraction along a first direction. The deformation member includes a plurality of blocks connected to each other by flexible joints and is coupled to the actuator and the mirror mount. The deformation member is configured to change a displacement in the first direction due to operation of the actuator to a displacement in a second direction that crosses the first direction, amplify the changed displacement, and transmit the amplified displacement to the mirror mount.

Abstract: A laser irradiation apparatus is provided. The laser irradiation apparatus includes a laser beam generator configured to generate laser beams; a slit unit configured to selectively transmit the laser beams; a mirror unit configured to change a path of the selectively transmitted laser beams, so as to irradiate the selectively transmitted laser beams onto a processing target; a first optical system, wherein a first portion of the selectively transmitted laser beams penetrates through the mirror unit and is projected to the first optical system; and a second optical system, wherein a second portion of the selectively transmitted laser beams penetrates through the mirror unit and is projected to the second optical system.

Abstract: A method for performing a laser crystallization is provided. The method includes generating a laser beam, refracting the laser beam to uniformize an intensity of the laser beam at a focal plane of the laser beam. The laser beam whose intensity is uniformized is applied into an object substrate mounted with a stage.

Abstract: Apparatus for uniformizing light amount distribution by shaking line beams along a longitudinal axis direction is provided. The apparatus includes a mirror mount, a mirror, an actuator, and a deformation member. The mirror fixed to the mirror mount and includes a reflective surface. The actuator is disposed at a distance from the mirror mount and configured to repeat expansion and contraction along a first direction. The deformation member includes a plurality of blocks connected to each other by flexible joints and is coupled to the actuator and the mirror mount. The deformation member is configured to change a displacement in the first direction due to operation of the actuator to a displacement in a second direction that crosses the first direction, amplify the changed displacement, and transmit the amplified displacement to the mirror mount.

Abstract: An optical module for irradiation of laser beams includes a mirror mount, a rotation shaft coupled to a center of the mirror mount, a vibration member coupled to one end of the mirror mount and the vibration member vibrating the end of the mirror mount in front-and-rear directions, a mirror fixed to the mirror mount and the mirror irradiating laser beams by performing reciprocal rotational motion with the mirror mount with respect to the rotation shaft, and a weight arranged on at least one of a first side and a second side of the mirror mount. The weight is interposed between the rotation shaft and the at least one of the first side and the second side to compensate concentricity of the mirror.

Abstract: A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.

Abstract: A frit sealing system for combining a first substrate and a second substrate using frit comprises a laser generating a laser beam, and a homogenizer normalizing the intensity of the laser beam within a cross section of the laser beam in the transverse direction. The frit sealing system further comprises a support apparatus configured to hold a first and a second substrate with frit interposed between them, wherein the frit is configured to be cured by heat generated from the laser beam and thereby solidifying and binding the first and the second substrates.

Abstract: A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.

Abstract: The present invention provides a system for processing a semiconductor substrate using a laser beam, the system including: a storing unit storing a process control data set for a slot for loading the semiconductor substrate therein; a process controlling unit detecting identification information of the slot in which the semiconductor substrate is loaded, and reading the control data, which is set for the detected identification information, from the storing unit to control a process of the semiconductor substrate; and a substrate processing unit processing the semiconductor substrate on the basis of the read control data using the laser beam with a predetermined energy.

Abstract: A laser beam mixing apparatus to convert a laser beam bundle into a single laser beam having a uniform energy density. The laser beam mixing apparatus includes: a barrel to adjust a distance between a multi-core optical cable and an optical lens included therein, to convert a laser beam bundle into a single beam; and a stage to adjust the position and angle a single-core optical cable with respect to the optical lens, to align the core of the single-core optical cable with the center of the single beam.

Abstract: A frit sealing system for combining a first substrate and a second substrate using frit comprises a laser generating a laser beam, and a homogenizer normalizing the intensity of the laser beam within a cross section of the laser beam in the transverse direction. The frit sealing system further comprises a support apparatus configured to hold a first and a second substrate with frit interposed between them, wherein the frit is configured to be cured by heat generated from the laser beam and thereby solidifying and binding the first and the second substrates.