Abstract: Methods for fabricating semiconductor structures are provided. An exemplary method includes forming a first transistor structure and a second transistor structure over a substrate, wherein each transistor structure includes at least one nanosheet. The method further includes depositing a metal over each transistor structure and around each nanosheet; depositing a coating over the metal; depositing a mask over the coating; and patterning the mask to define a patterned mask, wherein the patterned mask lies over a masked portion of the coating and the second transistor structure, and wherein the patterned mask does not lie over an unmasked portion of the coating and the first transistor structure. The method further includes etching the unmasked portion of the coating and the metal over the first transistor structure using a dry etching process with a process pressure of from 30 to 60 (mTorr).

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.

Abstract: A mending method for a display includes the steps of making a display device light to make a plurality of light emitting positions thereof shine, searching out a plurality of defect positions among the light emitting positions, providing a transferring device having a transferring surface with a plurality of miniature light emitting elements positioned correspondingly to the light emitting positions, planning a mending procedure which includes in the area the transferring surface corresponds to, choosing in chief the largest number of defect positions able to be mended at a single time according to the positions of the miniature light emitting elements and then in the area the transferring surface corresponds to, planning the rest of the defect positions according to the rest of the miniature light emitting elements, and according to the mending procedure, moving the transferring device to weld the miniature light emitting elements at the defect positions.

Abstract: A cold plate is provided and includes: a housing disposed with a chamber; a base combined with the housing to form a working space separated from the chamber but connected with the chamber through an interconnecting structure to allow a working medium to flow within the chamber and the working space; a heat transfer structure disposed on the inner side of the base; and a pump disposed within the working space to drive the working medium in the working space. As such, the cold plate can provide better heat dissipation performance.

Abstract: A physical analysis method, a sample for physical analysis and a preparing method thereof are provided. The preparing method of the sample for physical analysis includes: providing a sample to be inspected; and forming a contrast enhancement layer on a surface of the sample to be inspected. The contrast enhancement layer includes a plurality of first material layers and a plurality of second material layers stacked upon one another. The first material layer and the second material layer are made of different materials. Each one of the first and second material layers has a thickness that does not exceed 0.1 nm. In an image captured by an electron microscope, a difference between an average grayscale value of a surface layer image of the sample to be inspected and an average grayscale value of an image of the contrast enhancement layer is at least 50.

Abstract: A voltage generating device includes a clock signal generator, a voltage regulator and a pump circuit. The clock signal generator generates a clock signal according to an enable signal. The voltage regulator generates and adjusts a first voltage according to a reference voltage and the enable signal. The pump circuit receives the clock signal, the first voltage and a second voltage, wherein the pump circuit performs a voltage pump operation to generate an output voltage based on the clock signal according to the first voltage and the second voltage. The output voltage equals to a summation of the first voltage and the second voltage.

Abstract: The present disclosure provides a matrix device and an operation method thereof. The matrix device includes a transpose circuit and a memory. The transpose circuit is configured to receive a first element string representing a native matrix from a matrix source, wherein all elements in the native matrix are arranged in the first element string in one of a “row-major manner” and a “column-major manner”. The transpose circuit transposes the first element string into a second element string, wherein the second element string is equivalent to an element string in which all elements of the native matrix are arranged in another one of the “row-major manner” and the “column-major manner”. The memory is coupled to the transpose circuit to receive the second element string.

Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A computing resource sharing system and a computing resource sharing method are provided. The method includes: in response to receiving a resource request signal from a resource request device, obtaining a foreground process, a background process, a name of a software service, and an operating status of the software service of a resource sharing device; determining a specific graphic computing resource to be shared according to the foreground process, the background process, the name of the software service, and the operating status of the software service; applying the specific graphic computing resource to assist the resource request device in performing a graphic computing operation; transmitting a graphic computing result of the graphic computing operation back to the resource request device.

Abstract: A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

Abstract: A sample analyzing method and a sample preparing method are provided. The sample analyzing method includes a sample preparing step, a placing step, and an analyzing step. The sample preparing step includes an obtaining step implemented by obtaining an identification information; and a marking and placing step implemented by placing a sample carrying component having a sample disposed thereon into a marking equipment, allowing the marking equipment to utilize the identification information to form an identification structure on the sample carrying component, and placing the sample carrying component into one of the accommodating slots according to the identification information. The placing step is implemented by taking out the sample carrying component from one of the accommodating slots and placing the sample carrying component into an electron microscope equipment. The analyzing step is implemented by utilizing the electron microscope equipment to photograph the sample to generate an analyzation image.

Abstract: An attached floating image touch-control device is provided. The attached floating image touch-control device includes a trigger module, a floating image generation module and a sensing module. The trigger module includes a movable trigger component. The floating image generation module includes a light source, an imaging unit, and a floating imaging unit disposed on the imaging unit. The sensing module is arranged on the floating image generation module and communicatively connected to the trigger module, wherein when the sensing module senses a touch action, the sensing module outputs a driving signal, and the trigger module moves the trigger component based on the driving signal to contact and trigger the contact-type button.

Abstract: A method for fabricating semiconductor devices is disclosed. The method includes forming a gate trench over a semiconductor channel, the gate trench being surrounded by gate spacers. The method includes sequentially depositing a work function metal, a glue metal, and an electrode metal in the gate trench. The method includes etching respective portions of the electrode metal and the glue metal to form a gate electrode above a metal gate structure. The metal gate structure includes a remaining portion of the work function metal and the gate electrode includes a remaining portion of the electrode metal. The gate electrode has an upper surface extending away from a top surface of the metal gate structure.

Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

Abstract: A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.

Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.