Abstract: A diffuser plate with higher light diffusion efficiency and brightness applied to backlight module of Liquid Crystal Display TV (LCD TV) for providing uniform light is disclosed. An optical lens with a diffusion layer is disposed on one side of the substrate. The diffusion layer is arranged above the optical lens for enhancing diffusion effect. The other side of the diffuser plate can be a plane or having a lens structure. By Lenticular lens, the homogeneity of emitted light is improved so as to reduce the amount of diffusion particles being added into the diffusion plate Therefore, the light transmission is increased and the brightness is enhanced. Meanwhile, ability of shielding lamps is considered and Moiré effect is eliminated. Moreover, the diffusion layer is co-extruded on surface of the Lenticular lens together with the substrate so that the device is easy to be produced.

Abstract: A filter device used in a paint cup of a spraying gun, including a filter mounted in a paint cup body of the paint cup. The bottom of the paint cup body is tapered into a conic shape for connecting with a connecting tube for connecting with the spraying gun. An adjoining section between inner face of the conic bottom of the paint cup body and inner face of a wall of the paint cup body is formed as a fixing section for fixing the filter. The filter includes a plane filter mesh and a ventilating tube extending from one face of the filter mesh toward an opening of the paint cup body. The circumference of the filter mesh is engaged with the fixing section in the paint cup body. The ventilating tube has an internal passage passing through the filter mesh. An upper cap is fitted on one end of the ventilating tube, which end is distal from the filter mesh. The upper cap is formed with at least one ventage communicating with the passage of the ventilating tube and external side.

Abstract: Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing the polysilicon layer to form a poly oxide layer on the polysilicon layer; (d) forming and defining a photoresist layer on the poly oxide layer for exposing parts of the poly oxide layer; (e) etching the poly oxide layer, the polysilicon layer and the gate oxide layer via the photoresist layer for forming a poly oxide structure, a polysilicon structure and a gate oxide structure; and (f) removing the photoresist layer. The present invention introduces a poly oxide layer instead of the CVD oxide for preventing the photoresist lifting issue.

Abstract: A fabrication method for forming a gate structure through an amorphous silicon layer includes providing a substrate layer, forming an amorphous silicon layer of a selected thickness on the substrate layer at a reaction temperature between about 520° C. and 560° C., and forming a doped amorphous silicon layer in a upper portion of the amorphous silicon layer at a reaction temperature between about 520° C. and 560° C.

Abstract: A light diffusion sheet with high surface hardness and method of manufacturing the same is used in the backlight of liquid crystal display and is made by multi-player plastic co-extrusion technology, which can produce light diffusion sheet structure of a plurality layers. The structure is to propose at least a high surface hardness layer on the light diffusion sheet as producing backlight module with direct light of liquid crystal display so as to achieve the resistance to scratch. Therefore, it can prevent from the scratch caused by the hardness stuffs such as fingers, dust, module frame, and so on in the assembling, delivery, or packing processes, and further facilitate the mass production, reduce the manufacturing cost, and increase the yield ratio of assembling significantly.

Abstract: A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having a semiconductor substrate, a protective layer formed on the semiconductor substrate, and a polysilicon layer formed on the protective layer; and removing the polysilicon layer. The wafer and the reclaiming method of the wafer can prevent the substrate of the wafer from being destroyed during the reclaiming process and increase the reclaiming rate of the wafer.

Abstract: A battery connector (100) adapted for mating with a complementary connector of a mobile phone includes a header (1), a socket (2) which can be movable in a lengthwise direction on the header and a plurality of contacts (3) retained in the header. The header defines a plurality of receiving cavities (111) for receiving the contacts. The socket includes a plurality of blocks (22) each defining a pair of chamfers (221) for correctly leading the complementary connector into the battery connector.

Abstract: A diffusion sheet structure in the direct type backlight module with anti-UV rays function and its manufacturing method discloses a diffusion sheet in the backlight module applied to TFT-LCD TV, and plural layer of the diffusion sheet made by a method of a multi-layer co-extrusion. The diffusion sheet advocates that while producing diffusion layer, at least a ultra-violet rays absorption layer set on the surface of diffusion layer at the same time to achieve insulating ultra-violet rays directly irradiated on the diffusion sheet and to avoid yellow and pyrolysis phenomenon occurred on the diffusion sheet. These results in avoiding the deviation caused from color temperature and chromaticity coordinate of TFT-LCD TV because of yellow diffusion sheet, then to achieve the purpose of improving product quality and materials lifespan.