Abstract: The present invention discloses a cooling system which is suitable for being used in cooperation with a heat dissipation tank, and includes a filter unit, two working units, and two control valve groups arranged at the working units. The filter unit includes a filter, an inlet end, and an outlet end. The outlet end of the filter unit is connected to a liquid inlet of the heat dissipation tank. Each of the working units includes a driving assembly and a heat exchange assembly, each of the driving assemblies includes a first end, a second end, and a driving pump, the first end is connected to a liquid outlet of the heat dissipation tank, the second end is connected to the inlet end of the filter unit and one end of the heat exchange assembly, and another end of the heat exchange assembly is connected to the liquid inlet.

Abstract: The present invention discloses a cooling device including an accommodating tank, a turbulence plate, an adjustment structure and a control mechanism. The accommodating tank is adapted to accommodate a coolant. The turbulence plate divides the accommodating tank into a liquid inlet space and a cooling space. The turbulence plate includes a groove that divides the turbulence plate into a first plate portion and a second plate portion. The adjustment structure includes an adjustment plate corresponding to the groove. The control mechanism controls the adjustment plate to move between a first position and a second position, where when the adjustment plate moves from the first position to the second position, the adjustment plate passes through the groove and enters the liquid inlet space, to divide the liquid inlet space into a first chamber corresponding to the first plate portion and a second chamber corresponding to the second plate portion.

Abstract: A head-mounted display includes a host, two installing bases, two connection elements and a head belt. The host has two installing grooves and two opposite sidewalls, and the two installing grooves respectively penetrate through the two sidewalls. The two installing bases are disposed in the host, wherein each installing base has an abutting portion and an installing portion connected to each other. The abutting portion of each installing base abuts against an inner edge of the corresponding sidewall, and the installing portion of each installing base is exposed outside of the host through the corresponding installing groove. The two connection elements are respectively installed onto the two installing portions of the two installing bases. The head belt has two opposite connection portions, and the two connection portions are respectively connected to the two connection elements.

Abstract: A LED bulb comprises: a lamp-seat capable of connecting an external power supply, a lampshade fixed above the lamp-seat, and a circuit board mounted in the lamp-seat and the lampshade. The bottom end of the circuit board is electrically connected to the lamp-seat, and the top end defines a first portion provided for setting the upper-emitting light-source module. The circuit board has a second portion with a width gradually downwardly widened, and the second portion is set with an oblique-upper emitting light-source module. The circuit board is connected to a third portion, and the third portion has a width gradually narrowed downwardly, and the third portion is set with an oblique-lower emitting light-source module. The light-source modules are composed of a plurality of LED arrays and are suspended inside the lampshade, so they are compatible with the specification requirements of the United Nations Economic Commission for Europe's automotive Regulations.

Abstract: A head-mounted display includes a host, two installing bases, two connection elements and a head belt. The host has two installing grooves and two opposite sidewalls, and the two installing grooves respectively penetrate through the two sidewalls. The two installing bases are disposed in the host, wherein each installing base has an abutting portion and an installing portion connected to each other. The abutting portion of each installing base abuts against an inner edge of the corresponding sidewall, and the installing portion of each installing base is exposed outside of the host through the corresponding installing groove. The two connection elements are respectively installed onto the two installing portions of the two installing bases. The head belt has two opposite connection portions, and the two connection portions are respectively connected to the two connection elements.

Abstract: A cleaning solution and a cleaning method for a semiconductor substrate or device, which has particularly excellent cleaning performance for removing a residue or film including an inorganic substance that contains silicon atoms, and that has a high flash point. The cleaning solution contains a water miscible organic solvent, a quaternary ammonium hydroxide, and water. The water miscible organic solvent is a glycol ether based solvent or an aprotic polar solvent having a flash point of 60° C. or greater. The cleaning method includes using the cleaning solution to clean from the semiconductor substrate or the device a residue or film formed on the semiconductor substrate or adhered to the device, the residue or film including at least one of a resist and an inorganic substance that contains silicon atoms.

Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

Abstract: A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

Abstract: A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.

Abstract: A method of making a semiconductor device including forming a first sacrificial layer over a first layer to be etched, the first sacrificial layer having a plurality of openings formed therethrough exposing a portion of the first layer; forming a first photoresist layer over the first sacrificial layer and filling the plurality of openings formed through the first sacrificial layer; forming a plurality of openings in the first photoresist layer, each one of the plurality of openings in the first photoresist layer overlying one of the openings in the first sacrificial layer and wherein each opening in the first sacrificial layer has a smaller cross-sectional area then the cross-sectional area of the overlying opening in the first photoresist layer; and etching the first layer through the openings in the first photoresist layer and the first sacrificial layer, comprising exposing the first layer to an etching material.

Abstract: A semiconductor device having a specific contact angle for immersion lithography is disclosed. The semiconductor device includes a substrate and a top layer disposed on the substrate. The top layer used in an immersion lithography process includes a composition such that a fluid droplet that occurs during the immersion lithographic process and is not part of an exposure fluid puddle, will have a contact angle between about 40° and about 80° with a surface of the top layer.

Abstract: Various seal ring arrangements for an immersion lithography system are disclosed. With the seal ring arrangements, the immersion lithography system can provide better sealing effect for processing the wafers on a wafer chuck.

Abstract: A method for photoresist characterization includes forming a photoresist on a supportive structure; and characterizing the photoresist using a metrology tool selected from the group consisting of a transmission electron microscope (TEM), a scanning electron microscope (SEM), an atomic force microscope (AFM), a small angle X-ray scattering (SAXS) and a laser diffraction particle analyzer.