Abstract: Disclosed herein are recombinant antibodies or the fragment thereof for detecting ganglioside GM2 activator (GM2A) protein in vitro. Also disclosed herein are kits and methods for determining whether a subject has or is at risk of developing lung cancer with the aid of the present recombinant antibodies.

Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a first light-emitting unit, a second light-emitting unit, a first optic structure, a second optic structure, a first light-transmitting structure, a second light-transmitting structure, and a light-blocking structure. The first optic structure covers a top surface and a side surface of the first light-emitting unit, the second optic structure covers a top surface and a side surface of the second light-emitting unit. The first light-transmitting structure covers the first optic structure. The second light-transmitting structure covers the second optic structure. The light-blocking structure surrounds the first light-emitting unit and the second light-emitting unit, and covers the side surfaces of the first optic structure, the second optic structure, the first light-transmitting structure and the second light-transmitting structure.

Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: A pointing device includes: a magneto-electric transducer for detecting a variation in magnetic field of a magnetic element carried on an operator due to movement of the operator relative to an original position and for generating a voltage signal based on a detection result made thereby; a sampling unit for sampling the voltage signal to generate a sampling voltage; and a processing unit operable to generate a control signal corresponding to the movement of the operator upon detecting one of that the sampling voltage is not within a voltage range and that the sampling voltage is within the voltage range while a displacement of the operator from the original position is greater than a predetermined distance. A method of enabling a pointing device to generate a control signal is also disclosed.

Abstract: A pointing device includes: a magneto-electric transducer for detecting a variation in magnetic field of a magnetic element carried on an operator due to movement of the operator relative to an original position and for generating a voltage signal based on a detection result made thereby; a sampling unit for sampling the voltage signal to generate a sampling voltage; and a processing unit operable to generate a control signal corresponding to the movement of the operator upon detecting one of that the sampling voltage is not within a voltage range and that the sampling voltage is within the voltage range while a displacement of the operator from the original position is greater than a predetermined distance. A method of enabling a pointing device to generate a control signal is also disclosed.