Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A Group-III nitrides epitaxial structure includes a Si substrate, and a Group-III nitrides layer disposed over the Si substrate, wherein an interface structure of “coexistence of Al atoms and SixNy” between the Si substrate and the Group-III nitrides. Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides; and SixNy are configured to release mismatch stress caused by heteroepitaxy. A fabricating method comprises: (1) providing a Si substrate; (2) forming an interface structure over a surface of the Si substrate , wherein the interface structure is arranged with both Al atoms and SixNy, which are then cladded by an AlN epitaxial layer; and (3) growing Group-III nitrides over the interface structure wherein the Al atoms are configured to be absorbed to the Si substrate and connect the Group-III nitrides and the SixNy is configured to release mismatch stress generated by heteroepitaxy.