Abstract: A cold plate is provided and includes: a housing disposed with a chamber; a base combined with the housing to form a working space separated from the chamber but connected with the chamber through an interconnecting structure to allow a working medium to flow within the chamber and the working space; a heat transfer structure disposed on the inner side of the base; and a pump disposed within the working space to drive the working medium in the working space. As such, the cold plate can provide better heat dissipation performance.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: Vital sign sensing method and system using a communication device are disclosed in the present invention. An EVM algorithm is performed on a demodulated in-phase signal and a demodulated quadrature-phase signal output from an IQ demodulator for extracting a vital-sign signal of a subject. Any communication device can still preserve communication function while being used as a vital sign sensor, no other hardware architecture is required. The vital sign sensing method and system can overcome the shortcoming of signal interference between the conventional active sensing system and the communication device and also can reduce the construction costs of noncontact vital sign sensing system significantly.

Abstract: An integrated circuit (IC) and a method for operating the IC are provided. The IC comprises a device under test and a first heater. The first heater is located at a first side of the device and provides heat to control a temperature of the device. The first heater comprises a semiconductor device having a first doped region and a second doped region having a conductivity type opposite to that of the first doped region, the first doped region interfacing with the second doped region.

Abstract: An integrated circuit (IC) and a method for operating the IC are provided. The IC comprises a device under test and a first heater. The first heater is located at a first side of the device and provides heat to control a temperature of the device. The first heater comprises a semiconductor device having a first doped region and a second doped region having a conductivity type opposite to that of the first doped region, the first doped region interfacing with the second doped region.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.