Patents by Inventor Jen-Hao Yeh

Jen-Hao Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12287364
    Abstract: A test system includes a to-be-tested die including a to-be-tested transistor and a sense transistor, and a test device including a signal amplifying unit, a testing unit, and a probe card connecting the signal amplifying unit and the testing unit to the die. The signal amplifying unit has a first terminal connected to the to-be-tested transistor, and second and third terminals connected to the sense transistor. The signal amplifying unit stabilizes voltages at the second and third terminals based on a voltage at the first terminal, and generates an amplification voltage based on the voltages at the first to third terminals. The testing unit provides test signals to the to-be-tested transistor, determines magnitudes of currents flowing through the to-be-tested transistor and the sense transistor based on the test signals, the amplification voltage and a predetermined resistance, and thus acquires a current ratio to determine whether the die is defective.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: April 29, 2025
    Assignee: LEADPOWER-SEMI CO., LTD.
    Inventors: Cheng-Jyun Wang, Po-Hsien Li, Jen-Hao Yeh
  • Patent number: 12114412
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: October 8, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Henry Yee Shian Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 12101207
    Abstract: A communication apparatus and an associated method are disclosed. The communication apparatus includes differential input ports; a signal pairing circuit, arranged for coupling the differential input ports to a receiving circuit, wherein when the signal pairing circuit operates in a first mode, a positive input port and a negative input port of the differential input ports correspondingly electrically couple to a positive input terminal and a negative input terminal of the receiving circuit, when the signal pairing circuit operates in a second mode, the positive input port and the negative input port of the differential input ports correspondingly electrically couple to the negative input terminal and the positive input terminal of the receiving circuit; a processor circuit, arranged for determining whether the decoded signal includes a specific code before the timer is time out and generating a determination result; and control the signal pairing circuit according to the determination result.
    Type: Grant
    Filed: March 19, 2023
    Date of Patent: September 24, 2024
    Assignee: REALTEK SEMICONDUCTOR CORPORATION
    Inventors: Te Lung Fang, Chih Chieh Yen, Jen-Hao Yeh, Wei-Yi Wei
  • Publication number: 20240302427
    Abstract: A test system includes a to-be-tested die including a to-be-tested transistor and a sense transistor, and a test device including a signal amplifying unit, a testing unit, and a probe card connecting the signal amplifying unit and the testing unit to the die. The signal amplifying unit has a first terminal connected to the to-be-tested transistor, and second and third terminals connected to the sense transistor. The signal amplifying unit stabilizes voltages at the second and third terminals based on a voltage at the first terminal, and generates an amplification voltage based on the voltages at the first to third terminals. The testing unit provides test signals to the to-be-tested transistor, determines magnitudes of currents flowing through the to-be-tested transistor and the sense transistor based on the test signals, the amplification voltage and a predetermined resistance, and thus acquires a current ratio to determine whether the die is defective.
    Type: Application
    Filed: June 29, 2023
    Publication date: September 12, 2024
    Inventors: Cheng-Jyun WANG, Po-Hsien LI, Jen-Hao YEH
  • Publication number: 20230380044
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Henry Yee Shian TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 11800626
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Henry Yee Shian Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20230308313
    Abstract: A communication apparatus and an associated method are disclosed. The communication apparatus includes differential input ports; a signal pairing circuit, arranged for coupling the differential input ports to a receiving circuit, wherein when the signal pairing circuit operates in a first mode, a positive input port and a negative input port of the differential input ports correspondingly electrically couple to a positive input terminal and a negative input terminal of the receiving circuit, when the signal pairing circuit operates in a second mode, the positive input port and the negative input port of the differential input ports correspondingly electrically couple to the negative input terminal and the positive input terminal of the receiving circuit; a processor circuit, arranged for determining whether the decoded signal includes a specific code before the timer is time out and generating a determination result; and control the signal pairing circuit according to the determination result.
    Type: Application
    Filed: March 19, 2023
    Publication date: September 28, 2023
    Inventors: TE LUNG FANG, CHIH CHIEH YEN, JEN-HAO YEH, WEI-YI WEI
  • Patent number: 11737200
    Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11723141
    Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Grant
    Filed: August 8, 2022
    Date of Patent: August 8, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20220386440
    Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Inventors: Chun-Lin Louis CHANG, Jen-Hao YEH, Tzung-Chi FU, Bo-Tsun LIU, Lin-Jui CHEN, Po-Chung CHENG
  • Publication number: 20220361311
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 10, 2022
    Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Yee-Shian Henry TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 11452197
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Yee-Shian Henry Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11419203
    Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: August 16, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20210235572
    Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11069794
    Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: July 20, 2021
    Assignee: Leadpower-semi Co., LTD.
    Inventors: Po-Hsien Li, Jen-Hao Yeh, Hsin-Yen Chiu
  • Patent number: 11069805
    Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jen-Hao Yeh, Chih-Chang Cheng, Ru-Yi Su, Ker Hsiao Huo, Po-Chih Chen, Fu-Chih Yang, Chun-Lin Tsai
  • Publication number: 20210168923
    Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Application
    Filed: February 8, 2021
    Publication date: June 3, 2021
    Inventors: Chun-Lin Louis CHANG, Jen-Hao YEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 10980100
    Abstract: A system includes a laser source operable to provide a laser beam, a laser amplifier having a gain medium operable to provide energy to the laser beam when the laser beam passes through the laser amplifier, and a residual gain monitor operable to provide a probe beam and operable to derive a residual gain of the laser amplifier from the probe beam when the probe beam passes through the laser amplifier while being offset from the laser beam in time or in path.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10917959
    Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.
    Type: Grant
    Filed: September 29, 2019
    Date of Patent: February 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Lin Louis Chang, Jen-Hao Yeh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 10852191
    Abstract: A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jen-Hao Yeh, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng