Patents by Inventor Jen-Hung Chiang

Jen-Hung Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942433
    Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.
    Type: Grant
    Filed: January 17, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Jen-Fu Liu, Ming Hung Tseng, Tsung-Hsien Chiang, Yen-Liang Lin, Tzu-Sung Huang
  • Publication number: 20240076422
    Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.
    Type: Application
    Filed: September 1, 2023
    Publication date: March 7, 2024
    Inventors: Jing-Cherng TSAI, Jen-Long WU, Wen-Hao KANG, Kuei-Pin LIN, Jing-Yu LEE, Jun-Ye HONG, Zih-Yu SHIH, Cheng-Hung CHIANG, Gang-Wei SHEN, Yu-Chuan SUNG, Chung-Hua WENG, Hsing-Ya CHEN
  • Patent number: 8181342
    Abstract: Disclosed are a coreless packaging substrate and a manufacturing method thereof. The substrate includes a built-up structure and a first wiring layer. The built-up structure has a first outside and an opposite second outside, and includes one or more second dielectric layers and second wiring layers, and a plurality of conductive vias. The second dielectric layers have first and second surfaces respectively facing the first and second outsides. The second wiring layers are disposed on the second surface. The conductive vias are disposed in the second dielectric layer. The outermost second wiring layer at the second outside has a plurality of second conductive pads. The first wiring layer is embedded into and exposed from the first surface of the outermost second dielectric layer at the first outside, and has a plurality of first conductive pads. The conductive vias electrically connect the first wiring layer and the second wiring layer.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: May 22, 2012
    Assignee: Unimicron Technology Corp.
    Inventors: Jen-Hung Chiang, Chao-Meng Cheng
  • Publication number: 20100288549
    Abstract: Disclosed are a coreless packaging substrate and a manufacturing method thereof. The substrate includes a built-up structure and a first wiring layer. The built-up structure has a first outside and an opposite second outside, and includes one or more second dielectric layers and second wiring layers, and a plurality of conductive vias. The second dielectric layers have first and second surfaces respectively facing the first and second outsides. The second wiring layers are disposed on the second surface. The conductive vias are disposed in the second dielectric layer. The outermost second wiring layer at the second outside has a plurality of second conductive pads. The first wiring layer is embedded into and exposed from the first surface of the outermost second dielectric layer at the first outside, and has a plurality of first conductive pads. The conductive vias electrically connect the first wiring layer and the second wiring layer.
    Type: Application
    Filed: December 8, 2009
    Publication date: November 18, 2010
    Applicant: Unimicron Technology Corp.
    Inventors: Jen-Hung Chiang, Chao-Meng Cheng