Patents by Inventor Jen-Hwa Hsu
Jen-Hwa Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10245570Abstract: A multi-channel magnetic control system is provided, which is used for mixing fluids containing magnetic particles or separating magnetic species. In the multi-channel magnetic control system, a plurality of magnetic field switches are allocated to surround a plurality of channels, and the magnetization directions of the magnetic field switches are controlled to generate an uneven local magnetic field gradient, so as to achieve the purpose of fluid mixing or separating the magnetic species. This system can be also used as controllable flow resistance devices for magnetic fluids. Based on the demand of magnetic field distribution, overall or local control of the magnetic field switches can be executed to perform parallel processing over the multi-channel system of multi-dimensional allocation, so as to effectively save the processing time. The mixing or separation rate can be obtained via detecting residual magnetic species by magnetoresistive sensors arranged in inlets and outlets of channels.Type: GrantFiled: January 28, 2016Date of Patent: April 2, 2019Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Zung-Hang Wei, Jen-Hwa Hsu, Ching-Ray Chang, Hao-Ting Huang
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Patent number: 9709640Abstract: A single bridge magnetic field sensor includes a fluxguide mounted to a surface of a substrate. A bridge unit includes first, second, third, and fourth magnetoresistive elements mounted around the fluxguide and mounted on the surface of the substrate. A switching circuit is electrically connected to two voltage inputs, two grounding terminals, two voltage output terminals, and the four magnetoresistive elements. The switching circuit can proceed with circuit switching according to a magnetic field in each axis direction to be measured, thereby changing electrical connection between the voltage inputs, the grounding terminals, the voltage output terminals, and the four magnetoresistive elements. A measuring unit is electrically connected to the two voltage output terminals and the four magnetoresistive elements.Type: GrantFiled: August 31, 2015Date of Patent: July 18, 2017Assignee: National Taiwan UniversityInventors: Ching-Ray Chang, Jen-Tzong Jeng, Jen-Hwa Hsu, Chih-Cheng Lu, Bor-Lin Lai, Van-Su Luong
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Publication number: 20170080435Abstract: A multi-channel magnetic control system is provided, which is used for mixing fluids containing magnetic particles or separating magnetic species. In the multi-channel magnetic control system, a plurality of magnetic field switches are allocated to surround a plurality of channels, and the magnetization directions of the magnetic field switches are controlled to generate an uneven local magnetic field gradient, so as to achieve the purpose of fluid mixing or separating the magnetic species. This system can be also used as controllable flow resistance devices for magnetic fluids. Based on the demand of magnetic field distribution, overall or local control of the magnetic field switches can be executed to perform parallel processing over the multi-channel system of multi-dimensional allocation, so as to effectively save the processing time. The mixing or separation rate can be obtained via detecting residual magnetic species by magnetoresistive sensors arranged in inlets and outlets of channels.Type: ApplicationFiled: January 28, 2016Publication date: March 23, 2017Inventors: ZUNG-HANG WEI, JEN-HWA HSU, CHING-RAY CHANG, HAO-TING HUANG
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Publication number: 20170059668Abstract: A single bridge magnetic field sensor includes a fluxguide mounted to a surface of a substrate. A bridge unit includes first, second, third, and fourth magnetoresistive elements mounted around the fluxguide and mounted on the surface of the substrate. A switching circuit is electrically connected to two voltage inputs, two grounding terminals, two voltage output terminals, and the four magnetoresistive elements. The switching circuit can proceed with circuit switching according to a magnetic field in each axis direction to be measured, thereby changing electrical connection between the voltage inputs, the grounding terminals, the voltage output terminals, and the four magnetoresistive elements. A measuring unit is electrically connected to the two voltage output terminals and the four magnetoresistive elements.Type: ApplicationFiled: August 31, 2015Publication date: March 2, 2017Inventors: CHING-RAY CHANG, JEN-TZONG JENG, JEN-HWA HSU, CHIH-CHENG LU, BOR-LIN LAI, VAN-SU LUONG
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Patent number: 9541527Abstract: A magnetic device with a three-dimensional wave structure is provided, which contains magnetic elements and a signal receiver. The magnetic element is nano/micron structure with magnetic anisotropy. The magnetic element is formed on a substrate with three-dimensional wave structure. When a magnetic substance approaches to the magnetic element, the magnetic substance produces a corresponding magnetoresistance signal for the magnetic element. Through the measurement of the magnetoresistance of the three-dimensional wave structure, and the presence or absence of the magnetic substance can be detected. An external magnetic field is used to change the magnetization configuration of the three-dimensional wave structure to capture the magnetic substance by adsorbing the magnetic substance to a magnetic pole of the three-dimensional wave structure.Type: GrantFiled: October 27, 2015Date of Patent: January 10, 2017Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Zung-Hang Wei, Jen-Hwa Hsu, Ching-Ray Chang, Hao-Ting Huang
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Publication number: 20140062470Abstract: A three-dimensional (3D) in-plane magnetic sensor includes a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a circuit. The first magnetic sensor, second magnetic sensor and third magnetic sensor are installed on a same plane to measure the magnetic field component of first direction, second direction and third direction, where the third direction is perpendicular to the first and second direction. The third magnetic sensor includes a third fixed layer, a third magnetic insulating layer and a third free layer. The magnetoresistance of the third free layer is an intermediate value in the spontaneous magnetization direction, and is varied when interfered by an external magnetic field. In short, the 3D in-plane magnetic sensor is manufactured with semiconductor processing which does not require vertical adhesion, and also bring the benefits of improved production capacity, prolonged product life, reduced manufacturing cost and time.Type: ApplicationFiled: August 29, 2012Publication date: March 6, 2014Inventors: Meng-Huang Lai, Fu-Te Yuan, Hai-Tao Pan, Jen-Hwa Hsu, Ching-Ray Chang
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Patent number: 8491730Abstract: A magnetic material includes a main alloy having a rhombohedral crystal structure and a composition represented by CoyCuxPtz, wherein x ranges from 3 to 32, y ranges from 18 to 47, and z ranges from 40 to 60, with the proviso that x+y+z=100. The rhombohedral crystal structure of the main alloy includes a magnetic Co—Pt alloy region and a nonmagnetic Cu—Pt alloy region.Type: GrantFiled: June 15, 2011Date of Patent: July 23, 2013Assignee: National Taiwan UniversityInventors: Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, Chih-Shan Tan, Po-Cheng Kuo
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Patent number: 8337637Abstract: A method for ordering a disordered alloy includes: simultaneously ion bombarding and annealing a disordered alloy to transform the disordered alloy from a disordered crystalline state to an ordered crystalline state. A method for making a perpendicular magnetic recording medium which includes an ordered alloy layer is also disclosed.Type: GrantFiled: December 7, 2009Date of Patent: December 25, 2012Assignee: National Taiwan UniversityInventors: Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, Ching-Ray Chang
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Publication number: 20120237392Abstract: A magnetic material includes a main alloy having a rhombohedral crystal structure and a composition represented by CoyCuxPtz, wherein x ranges from 3 to 32, y ranges from 18 to 47, and z ranges from 40 to 60, with the proviso that x+y+z=100. The rhombohedral crystal structure of the main alloy includes a magnetic Co—Pt alloy region and a nonmagnetic Cu—Pt alloy region.Type: ApplicationFiled: June 15, 2011Publication date: September 20, 2012Applicant: National Taiwan UniversityInventors: Fu-Te Yuan, An-Cheng Sun, Jen-Hwa Hsu, Chih-Shan Tan, Po-Cheng Kuo
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Patent number: 7993766Abstract: A magnetic recording medium is provided in the present invention. The magnetic recording medium including a substrate; a base layer disposed on the substrate; an intermediate layer disposed on the base layer; and a recording layer disposed on the intermediate layer and including a magnetic matrix and a plurality of non-magnetic particles percolated in the magnetic matrix.Type: GrantFiled: March 25, 2008Date of Patent: August 9, 2011Assignee: Ching-Ray CHANGInventors: An-Cheng Sun, Po-Cheng Kuo, Jen-Hwa Hsu, Huei-Li Huang, Ching-Ray Chang
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Publication number: 20110070373Abstract: A method for forming an ordered alloy includes: (a) forming a layer of a first metal with a layer thickness of less than 0.3 nm over a substrate; (b) forming a layer of a second metal with a layer thickness of less than 0.3 nm on the layer of the first metal under an elevated temperature sufficient to cause interdiffusion of atoms of the first and second metals between the layer of the first metal and the layer of the second metal so as to form the ordered alloy; and (c) repeating steps (a) and (b) until a predetermined layer thickness of the ordered alloy is achieved.Type: ApplicationFiled: February 5, 2010Publication date: March 24, 2011Applicant: National Taiwan UniversityInventors: Shien-Wen Wang, An-Cheng Sun, Jen-Hwa Hsu, Po-Cheng Kuo, Ching-Ray Chang
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Publication number: 20110061770Abstract: A method for ordering a disordered alloy includes: simultaneously ion bombarding and annealing a disordered alloy to transform the disordered alloy from a disordered crystalline state to an ordered crystalline state. A method for making a perpendicular magnetic recording medium which includes an ordered alloy layer is also disclosed.Type: ApplicationFiled: December 7, 2009Publication date: March 17, 2011Applicant: NATIONAL TAIWAN UNIVERSITYInventors: FU-TE YUAN, AN-CHENG SUN, JEN-HWA HSU, CHING-RAY CHANG
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Publication number: 20090284669Abstract: A memory cell is provided in the present invention. The memory cell includes a first electrode receiving a first voltage to form an electric field therearound; and a combination arranged on the first electrode, comprising a liquid crystal molecule coupled with a magnetic substance for forming a magnetic field therearound, wherein the magnetic field changing with the first electric field.Type: ApplicationFiled: August 26, 2008Publication date: November 19, 2009Inventors: An-Cheng Sun, Jen-Hwa Hsu, Ching-Ray Chang
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Publication number: 20090162702Abstract: A magnetic recording medium is provided in the present invention. The magnetic recording medium including a substrate; a base layer disposed on the substrate; an intermediate layer disposed on the base layer; and a recording layer disposed on the intermediate layer and including a magnetic matrix and a plurality of non-magnetic particles percolated in the magnetic matrix.Type: ApplicationFiled: March 25, 2008Publication date: June 25, 2009Inventors: An-Cheng SUN, Po-Cheng KUO, Jen-Hwa HSU, Huei-Li HUANG, Ching-Ray CHANG
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Publication number: 20060280973Abstract: A magnetic recording medium having at least an adjustable magnetic property is provided. The provided magnetic recording medium includes a substrate and a layer sequence located thereon. The layer sequence includes a underlayer, a buffer layer and a recording layer made of a magnetic material. According to the present invention, the adjustable magnetic property of the magnetic recording medium is adjusted via the variation of the thickness of the underlayer.Type: ApplicationFiled: January 19, 2006Publication date: December 14, 2006Inventors: An-Cheng Sun, Po-Cheng Kuo, Jen-Hwa Hsu, Huei-Li Huang, Ching-Ray Chang
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Publication number: 20060021871Abstract: A method for fabricating an L10 alloy film is provided. The method includes steps of (a) providing a substrate; (b) heating the substrate as a preheated substrate at a first temperature ranged from 100° C. to 600° C. for a time period ranged from 5 minutes to 120 minutes, and then cooling the substrate to room temperature in the sputtering chamber; (c) depositing an alloy film on the preheated substrate; and (d) annealing the alloy film at a second temperature ranged from 200° C. to 500° C. to form the alloy film.Type: ApplicationFiled: July 29, 2004Publication date: February 2, 2006Inventors: Po-Cheng Kuo, Huei-Li Huang, Jen-Hwa Hsu, Ching-Ray Chang, An-Cheng Sun, Sheng-Chi Chen, Chun-Yuan Chou, Chang-Tai Lee, Huang-Wei Chang