Abstract: A package structure includes a die, an encapsulation layer, a redistribution layer structure and an adhesive material. The die includes a semiconductor substrate, conductive pads disposed over the semiconductor substrate and a passivation layer disposed over the semiconductor substrate and around the conductive pads. The encapsulation layer laterally encapsulates the die. the redistribution layer structure is disposed on the die and the encapsulation layer, and includes at least one redistribution layer embedded in at least one polymer layer, and the polymer layer contacts a portion of the passivation layer. The adhesive material is disposed on the die and covers an interface between the polymer layer and the passivation layer.

Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.

Abstract: A semiconductor package includes a substrate, a semiconductor device over the substrate and a plurality of solder joint structures bonded between the semiconductor device and the substrate, wherein each of the plurality of solder joint structures includes, by weight percent, 2% to 23% of Indium (In).

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.

Abstract: A semiconductor package includes a substrate, a semiconductor device over the substrate and a plurality of solder joint structures bonded between the semiconductor device and the substrate, wherein each of the plurality of solder joint structures includes, by weight percent, 2% to 23% of Indium (In).

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.

Abstract: A package structure includes a first package, a second package, a conductive spacer, and a flux portion. The first package includes a semiconductor die. The second package is stacked to the first package. The conductive spacer is disposed between and electrically couples the first package and the second package. The flux portion is disposed between and electrically couples the first package and the conductive spacer, where the flux portion includes a first portion and a second portion separating from the first portion by a gap, and the first portion and the second portion are symmetric about an extending direction of the gap. The gap is overlapped with the conductive spacer.

Abstract: Semiconductor devices including the use of solder materials and methods of manufacturing are provided. In embodiments the solder materials utilize a first tensile raising material, a second tensile raising material, and a eutectic modifier material. By utilizing the materials a solder material can be formed and used with a reduced presence of needles that may otherwise form during the placement and use of the solder material.

Abstract: An embodiment composite material for semiconductor package mount applications may include a first component including a tin-silver-copper alloy and a second component including a tin-bismuth alloy or a tin-indium alloy. The composite material may form a reflowed bonding material having a room temperature tensile strength in a range from 80 MPa to 100 MPa when subjected to a reflow process. The reflowed bonding material may include a weight fraction of bismuth that is in a range from approximately 4% to approximately 15%. The reflowed bonding material may an alloy that is solid solution strengthened by a presence of bismuth or indium that is dissolved within the reflowed bonding material or a solid solution phase that includes a minor component of bismuth dissolved within a major component of tin. In some embodiments, the reflowed bonding material may include intermetallic compounds formed as precipitates such as Ag3Sn and/or Cu6Sn5.

Abstract: A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: Provided is a package structure, including a die, a plurality of through vias, an encapsulant, a plurality of first connectors, a warpage control material and a protection material. The plurality of through vias are disposed around the die. The encapsulant laterally encapsulate the die and the plurality of through vias. The plurality of first connectors are electrically connected to a first surface of the plurality of through vias. The warpage control material is disposed over a first surface of the die. The protection material is disposed over the encapsulant, around the plurality of first connectors and the warpage control material. A Young's modulus of the warpage control material is greater than a Young's modulus of the encapsulant, and the Young's modulus of the encapsulant is greater than a Young's modulus of the protection material.

Abstract: A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.

Abstract: A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.

Abstract: A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.

Abstract: A semiconductor package includes a substrate, a semiconductor device over the substrate and a plurality of solder joint structures bonded between the semiconductor device and the substrate, wherein each of the plurality of solder joint structures includes, by weight percent, 2% to 23% of Indium (In).

Abstract: A package structure includes a first package, a second package, a conductive spacer, and a flux portion. The first package includes a semiconductor die. The second package is stacked to the first package. The conductive spacer is disposed between and electrically couples the first package and the second package. The flux portion is disposed between and electrically couples the first package and the conductive spacer, where the flux portion includes a first portion and a second portion separating from the first portion by a gap, and the first portion and the second portion are symmetric about an extending direction of the gap. The gap is overlapped with the conductive spacer.

Abstract: A package structure includes a die, an encapsulation layer, a redistribution layer structure and an adhesive material. The die includes a semiconductor substrate, conductive pads disposed over the semiconductor substrate and a passivation layer disposed over the semiconductor substrate and around the conductive pads. The encapsulation layer laterally encapsulates the die. the redistribution layer structure is disposed on the die and the encapsulation layer, and includes at least one redistribution layer embedded in at least one polymer layer, and the polymer layer contacts a portion of the passivation layer. The adhesive material is disposed on the die and covers an interface between the polymer layer and the passivation layer.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.

Abstract: A package structure includes an insulating encapsulation, at least one die, and conductive structures. The at least one die is encapsulated in the insulating encapsulation. The conductive structures are located aside of the at least one die and surrounded by the insulating encapsulation, and at least one of the conductive structures is electrically connected to the at least one die. Each of the conductive structures has a first surface, a second surface opposite to the first surface and a slant sidewall connecting the first surface and the second surface, and each of the conductive structures has a top diameter greater than a bottom diameter thereof, and wherein each of the conductive structures has a plurality of pores distributed therein.