Abstract: A method for forming a uniform damascene profile is provided. A wet etching process using a mixture containing ionized water, hydrochloric acid and hydrofluoric acid as an etching solution is applied on a substrate having a single/dual damascene structure formed thereon. The etching solution of the mixture containing ionized water, hydrochloric acid and hydrofluoric acid creates an etch selectivity between various layers of the single/dual damascene structure approximately 1:1. Thus, a damascene structure with a good profile is obtained.

Abstract: A polymer debris pre-cleaning method is described. The method provides a specific gas mixture after an etching process that uses a fluorocarbon reacting gas. The plasma generated from the gas mixture is then used to perform a pre-cleaning of the polymer debris. The gas mixture of specific gases is selected from the group of an oxygen and nitrogen gas mixture, a hydrogen and argon gas mixture, an argon and nitrogen gas mixture, or an oxygen and argon gas mixture. Since the plasma generated from the gas mixture softens, burns or even removes the hardened polymer debris, the polymer debris can be completely removed in the subsequent cleaning process. The duration of the subsequent cleaning process is thus reduced.