Abstract: A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

Abstract: A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

Abstract: A method for growing graphene by chemical vapor deposition is described. At least one substrate is loaded in a furnace. A reaction gas containing at least an oxygen-containing carbon source is introduced into the furnace. The reaction gas is heated and is UV-irradiated with a UV source, so that the carbon source is decomposed. A graphene film is deposited on a surface of the at least one substrate by the carbon atoms released by the decomposition of the carbon source.

Abstract: Provided is a pellicle film used for protecting an EUV lithographic mask including a first layer, a second layer, and a layered material. The second layer is formed on the first layer. The layered material is formed between the first layer and the second layer. The material of the layered material includes graphene, boron nitride, transition metal dichalcogenide, or a combination thereof.

Abstract: A photo-assisted atomic layer deposition method includes the following steps: preparing a processing system having a processing chamber and a first gas input channel connecting the processing chamber, and the first gas input channel having a pre-chamber with a transparent side wall; introducing a first gas into the pre-chamber; illuminating the interior space of the pre-chamber by ultraviolet light via the transparent side wall; and injecting the first gas illuminated by the ultraviolet light into the processing chamber. The reactivity of the first gas can be promoted by the illumination of the ultraviolet light in the pre-chamber, so that the first gas illuminated by the ultraviolet light becomes more active to react completely in the process of film depositions, with reduced ligand residues in the deposited films.

Abstract: A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

Abstract: A method for fabricating a chalcogenide film is presented. The method includes providing a substrate in a chamber and performing a first atomic layer deposition process to form a first oxide film on the substrate; performing a first chalcogenization process including introducing a first chalcogen element to transform the first oxide film into a first chalcogenide film; and performing an annealing process on the first chalcogenide film.