Patents by Inventor Jen-Lang Lue

Jen-Lang Lue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for analyzing the structure of deep trench capacitors and a preparation method thereof
    Patent number: 7329550
    Abstract: A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.
    Type: Grant
    Filed: January 10, 2005
    Date of Patent: February 12, 2008
    Assignee: Promos Technologies Inc.
    Inventors: Hsien-Wen Liu, Eugene Cheng, Jen-Lang Lue
  • Structural analysis method of deep trenches
    Publication number: 20070141732
    Abstract: A structural analysis method of deep trenches is provided. A substrate having a plurality of deep trenches is provided. A polishing process is performed on the substrate to form an incline in a partial region of the substrate to expose surface structures at different depths of the deep trenches. Then, a structural analysis of the surface structures at different depths of the deep trenches is performed to observe defects.
    Type: Application
    Filed: April 11, 2006
    Publication date: June 21, 2007
    Inventors: Kuan-Hsun Huang, Jen-Lang Lue
  • Method for analyzing the structure of deep trench capacitors and a preparation method thereof
    Publication number: 20060094132
    Abstract: A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.
    Type: Application
    Filed: January 10, 2005
    Publication date: May 4, 2006
    Inventors: Hsien-Wen Liu, Eugene Cheng, Jen-Lang Lue