Patents by Inventor Jen-Ren Chiou

Jen-Ren Chiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programming a flash memory cell
    Patent number: 6760257
    Abstract: Programming a flash memory cell comprises receiving a first Vt corresponding to a first bit stored in the flash memory cell and receiving a second Vt corresponding to a second bit stored in the flash memory cell. In additon, programming the flash memory cell comprises programming one of the first bit and the second bit of the flash memory cell with a first programming voltage if the first Vt and the second Vt both correspond to a low Vt state prior to programming the flash memory cell. Furthermore, the first programming voltage is &Dgr;V lower than a second programming voltage that is used to program one of the first bit and the second bit of the flash memory cell if either of the first Vt and the second Vt correspond to a high Vt state prior to programming the flash memory cell.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: July 6, 2004
    Assignee: Macronix International Co., Ltd.
    Inventors: Jen-Ren Huang, Ming-Hung Chou, Jen-Ren Chiou
  • PROGRAMMING A FLASH MEMORY CELL
    Publication number: 20040042270
    Abstract: Programming a flash memory cell comprises receiving a first Vt corresponding to a first bit stored in the flash memory cell and receiving a second Vt corresponding to a second bit stored in the flash memory cell. In additon, programming the flash memory cell comprises programming one of the first bit and the second bit of the flash memory cell with a first programming voltage if the first Vt and the second Vt both correspond to a low Vt state prior to programming the flash memory cell. Furthermore, the first programming voltage is &Dgr;V lower than a second programming voltage that is used to program one of the first bit and the second bit of the flash memory cell if either of the first Vt and the second Vt correspond to a high Vt state prior to programming the flash memory cell.
    Type: Application
    Filed: August 29, 2002
    Publication date: March 4, 2004
    Applicant: Macronix International Co., Ltd.
    Inventors: Jen-Ren Huang, Ming-Hung Chou, Jen-Ren Chiou