Abstract: A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues after the precursor gas reacts with the surface of the substrate, and an air curtain passageway formed in the nozzle body and located at a peripheral side of the extraction passageway for isolating gas to be sprayed on the substrate so as to form a closed gas flow field enclosing a process reaction region between a substrate carrier and the deposition nozzle such that the residues after the precursor gas reacts with the surface of the substrate do not leak.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: A deposition nozzle and a deposition apparatus include a nozzle body, a precursor passageway formed at a central region of the nozzle body for a precursor gas to be sprayed on the substrate such that the precursor gas reacts with a surface of the substrate, an extraction passageway formed in the nozzle body and located at a peripheral side of the precursor passageway, and extracting residues after the precursor gas reacts with the surface of the substrate, and an air curtain passageway formed in the nozzle body and located at a peripheral side of the extraction passageway for isolating gas to be sprayed on the substrate so as to form a closed gas flow field enclosing a process reaction region between a substrate carrier and the deposition nozzle such that the residues after the precursor gas reacts with the surface of the substrate do not leak.

Abstract: This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: A long linear-type microwave plasma source using a variably-reduced-height rectangular waveguide as the plasma reactor has been developed. Microwave power is fed from the both sides of the waveguide and is coupled into plasma through a long slot cut on the broad side of the waveguide. The reduced height of the waveguide is variable in order to control the coupling between microwave and plasma so that the plasma uniformity can remain a high quality when extending the length of the linear-type plasma source.

Abstract: A capacitively coupled plasma (CCP) generator with two input ports, which is especially used as a large-area capacitively coupled plasma (CCP) generator. In the inventive CCP generator, only a RF power supply is required to provide the two input ports with RF power. The input impedance at each of the input ports is adjustable so that the standing wave between two rectangular electrodes can be eliminated to achieve plasma uniformity.

Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.

Abstract: A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.

Abstract: The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.

Abstract: A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.

Abstract: The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device.

Abstract: The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device.

Abstract: The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.

Abstract: A wafer electroplating apparatus and method, comprising a wafer turning assembly, a vertical movement assembly, a wafer tilting assembly, and a frame. The wafer turning assembly has a turning shaft and a clasp for holding a wafer. The wafer tilting assembly has a tilting table being driven by a driving system, e.g. a cylinder, carrying an electroplating unit and wafer turning assembly. Thus the clasp holding a wafer and the electroplating unit are simultaneously inclined at preset angle against the horizontal plane, allowing for a large inclination angle. Therefore, gas bubbles generated during electroplating readily escape, and quality of electroplating is improved.

Abstract: The present invention provides an apparatus for liquid phase deposition, comprising: a saturation reaction system, including a mixture trough, at least two supply devices for raw materials, a stirrer device, a filter device, and valve control devices; a steady-flow over-saturation loop reaction system, including an over-saturation reaction trough, at least one liquid level control trough, at least two supply devices for raw materials, a stirrer device, a filter device, and valve control devices; an automatic solution concentration monitoring system, for controlling the reactant concentrations; and a waste liquid recycling system, comprising at least two storage troughs, a recycled waste liquid level sensor, a recycled waste liquid sensor, and valve control devices.

Abstract: A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring until saturation occurs, filtering out unnecessary solid-state particles, and providing saturated and filtered liquid into an over-saturation reaction trough of a steady-flow over-saturation loop reaction system and stopping the saturated and filtered liquid when the over-saturation reaction trough is filled and the saturated and filtered liquid over-flows into a liquid level control trough to a pre-determined level. The method also includes the steps of providing a substrate in the over-saturation reaction trough, providing reactants from at least two supply devices into the over-saturation reaction trough, and depositing a thin film onto the substrate when the saturated liquid becomes over-saturated.

Abstract: A Modified door for wafer container, includes a rotatable cammed member, two first links coupled to the rotatable cammed member and vertically aligned and moved in and out of respective first latch holes on the wafer transport module upon rotary motion of the rotatable cammed member, and two second links respectively coupled to the first links and horizontally moved in and out of respective second latch holes on the wafer transport module upon movement of the first links. The links each have a slope adapted to be moved with the respective link over a respective bearing means of the door body to force the door body inwards against the wafer transport module, keeping the wafer transport module well sealed.