Abstract: A system for pumping resist to a wafer coating machine includes a line that returns a selected proportion of the resist entering the resist pump to the resist supply tank. The return line to the tank is connected to the pump outlet at a higher point than the pump outlet to the wafer coating machine, and the resist that is returned to the tank carries substantially all of the bubbles that are carried in the resist entering the tank. The bubbles are removed from the resist in the tank and the resist can be used normally.

Abstract: A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.

Abstract: A system for pumping resist to a wafer coating machine includes a line that returns a selected proportion of the resist entering the resist pump to the resist supply tank. The return line to the tank is connected to the pump outlet at a higher point than the pump outlet to the wafer coating machine, and the resist that is returned to the tank carries substantially all of the bubbles that are carried in the resist entering the tank. The bubbles are removed from the resist in the tank and the resist can be used normally.

Abstract: A method for anti-corrosion etching of metal interconnections, comprised in part of an aluminum layer, is achieved. The metal lines form self-aligned contacts (SAC) in contact openings in a polysilicon/metal dielectric (PMD) layer to a patterned underlying polysilicon layer. The method involves performing an oxygen ashing step in the same etching chamber immediately after etching the aluminum lines in a halogen gas, such as BCl.sub.3 and Cl.sub.2. This method using oxygen ashing avoids the use of the more traditional passivation gases CHF.sub.3 and CF.sub.4 which can overetch the polysilicon exposed in the SAC process that would cause electrical opens. And further, it avoids the formation of a polymer residue which is difficult to remove. The oxygen treatment reduces the Cl.sub.2 on the sidewalls of the Al lines, and also removes portions of the photoresist mask material containing Cl.sub.2. It is also easier to remove the remaining photoresist in a solvent stripping process.

Abstract: A gauge marker system has a flexible track that fits around the circumference of a gauge housing and carries one or more markers that extend over the face of the gauge to indicate a dial position that is to be noticed by a person using the gauge. The markers can be slid along the track to a selected position. The track is adapted to be fastened to the gauge by a cable tie that lies in a groove on the track.

Abstract: A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.