Abstract: A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.

Abstract: A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.

Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: A HV-MOS device is described, including a substrate, a gate dielectric layer and a gate, a channel region, two doped regions as a source and a drain, a field isolation layer between the gate and at least one of the two doped regions, a drift region and a modifying doped region. The drift region is located in the substrate under the field isolation layer and connects with the channel region and the at least one doped region. The modifying doped region is at the periphery of the at least one doped region.

Abstract: A HV-MOS device is described, including a substrate, a gate dielectric layer and a gate, a channel region, two doped regions as a source and a drain, a field isolation layer between the gate and at least one of the two doped regions, a drift region and a modifying doped region. The drift region is located in the substrate under the field isolation layer and connects with the channel region and the at least one doped region. The modifying doped region is at the periphery of the at least one doped region.

Abstract: A HV-MOS device is described, including a substrate, a gate dielectric layer and a gate, a channel region, two doped regions as a source and a drain, a field isolation layer between the gate and at least one of the two doped regions, a drift region and a modifying doped region. The drift region is located in the substrate under the field isolation layer and connects with the channel region and the at least one doped region. The modifying doped region is at the periphery of the at least one doped region.

Abstract: A HV-MOS device is described, including a substrate, a gate dielectric layer and a gate, a channel region, two doped regions as a source and a drain, a field isolation layer between the gate and at least one of the two doped regions, a drift region and a modifying doped region. The drift region is located in the substrate under the field isolation layer and connects with the channel region and the at least one doped region. The modifying doped region is at the periphery of the at least one doped region.

Abstract: A photodiode is provided comprising a substrate, a well with a first electric type within the substrate, a heavily doped region with a second electric type within the well, and a insulating layer on the substrate. The insulating layer in the position on the heavily doped region is thinner than in other positions. A junction is thus formed between the heavily doped region and the well.

Abstract: A method for forming a photodiode is provided. A substrate having a well with a first electric type therein is provided. An insulating layer is formed on the substrate. The insulating layer is patterned to form an opening. The insulating layer still remains with a thin thickness below the bottom of the opening. A heavily doped region with a second electric type is formed in the well in the position below the opening. A junction is thus formed between the heavily doped region and the well.

Abstract: A structure of a photo diode and a method of manufacturing a photo diode comprise the steps of providing a substrate having an isolation region and a device region. A doped region is formed adjacent to the isolation region in the substrate by performing an ion implantation step and an annealing step. Next, a protective layer utilized to prevent the plasma damage is formed on the substrate and the isolation region, and an inter-layer dielectric layer is formed on the protective layer. Thereafter, a contact hole is formed to expose a portion of the doped region by patterning the inter-layer dielectric layer and the protective layer, and a contact plug is formed by filling the contact hole with a conductive material.