Abstract: A polymer is formed by capping a copolymer-graft-polylactone with an alcohol, wherein the copolymer is copolymerized from an anhydride monomer with a double bond, a monomer with a double bond, and an initiator. The polymer can be mixed with an organic solvent and pigment powder to form a dispersion. The dispersion can be mixed with a binder to form a paint.

Abstract: An aqueous polymer is formed by neutralizing a copolymer modified by polyalkylene glycol with ammonia, primary amine, secondary amine, inorganic base, or a combination thereof, wherein the copolymer is copolymerized from an anhydride monomer with a double bond, a monomer with a double bond, and an initiator. The aqueous polymer can be mixed and dispersed with water and pigment powder to form a dispersion. The dispersion can be mixed with binder to form an aqueous paint.

Abstract: An aqueous polymer is provided, which is formed by neutralizing a copolymer modified by polyalkylene glycol with ammonia, primary amine, secondary amine, or a combination thereof, wherein the copolymer is copolymerized from an anhydride monomer with a double bond, a monomer with a double bond, and an initiator. The aqueous polymer can be mixed and dispersed with water and pigment powder to form a dispersion. The dispersion can be mixed with binder to form an aqueous paint.

Abstract: A polymer is disclosed, which includes a structure of Formula 1 or Formula 2. R1 is a C2-18 alkylene group or a C6-18 arylene group, R2 is a C1-18 alkyl group, and R3 is a functional group of Formula 3. Each of X1, X2, X3, X4, X5, and X6, being the same or different, is H or methyl. Each of p, q, and r, being the same or different, is an integer of 1 to 60. R4 is —C2H4—, —C3H6—, Each of m and n, being the same or different, is an integer of 0 to 50, and m+n?0.

Abstract: An optical sensing module capable of providing a multi-directional optical sensing function teaches that the optical sensing module can be fixed on a circuit board via a bridging medium. The optical sensing module includes a supporter, a photosensitive component and a connecting component. The supporter includes a base and several lateral portions. The lateral portions are bent from edges of the base to form an accommodating space. The photosensitive component is disposed inside the accommodating space to receive an optical signal passing into an opening of the accommodating space. The connecting component is disposed on the supporter and includes a conductive terminal. The supporter is connected with the bridging material via the conductive terminal to stand on the circuit board by one of a plurality of sensing directions.

Abstract: A semiconductor device has a semiconductor die with composite bump structures over a surface of the semiconductor die. A conductive layer is formed over the substrate. The conductive layer has a channel in an interconnect site of the conductive layer. The channel extends beyond a footprint of the composite bump structures. The semiconductor die is disposed over the substrate. The bump material of the composite bump structures is melted. The composite bump structures are pressed over the interconnect site of the conductive layer so that the melted bump material flows into the channel. Electrical continuity between the composite bump structures and conductive layer is detected by a presence of the bump material in the channel. No electrical continuity between the composite bump structures and conductive layer is detected by an absence of the bump material in the channel. The electrical continuity can be detected by visual inspection or X-ray.

Abstract: An optical sensing module capable of providing a multi-directional optical sensing function teaches that the optical sensing module can be fixed on a circuit board via a bridging medium. The optical sensing module includes a supporter, a photosensitive component and a connecting component. The supporter includes a base and several lateral portions. The lateral portions are bent from edges of the base to form an accommodating space. The photosensitive component is disposed inside the accommodating space to receive an optical signal passing into an opening of the accommodating space. The connecting component is disposed on the supporter and includes a conductive terminal. The supporter is connected with the bridging material via the conductive terminal to stand on the circuit board by one of a plurality of sensing directions.

Abstract: The invention provides a package structure which includes a substrate, at least one chip module, and a housing. The at least one chip module is located on the substrate. The housing includes an upper cover, a surrounding wall, and at least one adhesion enhancement structure. The surrounding wall is connected to the upper cover and encompasses the at least one chip module. The surrounding wall and the adhesion enhancement structure are bonded to the substrate by an adhesive. The adhesion enhancement structure includes an encircled hole or a semi-encircled hole.

Abstract: A polymer is disclosed, which includes a structure of Formula 1 or Formula 2. R1 is a C2-18 alkylene group or a C6-18 arylene group, R2 is a C1-18 alkyl group, and R3 is a functional group of Formula 3. Each of X1, X2, X3, X4, X5, and X6, being the same or different, is H or methyl. Each of p, q, and r, being the same or different, is an integer of 1 to 60. R4 is —C2H4—, —C3H6—, Each of m and n, being the same or different, is an integer of 0 to 50, and m+n?0.

Abstract: The invention provides a package structure which includes a substrate, at least one chip module, and a housing. The at least one chip module is located on the substrate. The housing includes an upper cover, a surrounding wall, and at least one adhesion enhancement structure. The surrounding wall is connected to the upper cover and encompasses the at least one chip module. The surrounding wall and the adhesion enhancement structure are bonded to the substrate by an adhesive. The adhesion enhancement structure includes an encircled hole or a semi-encircled hole.

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract: Systems and methods are provided herein that can facilitate the managed reliability of data storage, including management of device remanufacturing and masking from an operating system a failure or predicted failure of a device running on a computer or a networked cluster of computers having access to the device. The systems and methods may facilitate removal of a device by coordinating among computers or controllers in a network cluster the logical removal of a device. At a later time, a coordinated logical re-introduction of the device to the systems or computers from which the device was logically removed can be performed. This can be accomplished via a virtualization system that may include a device function driver (DFD), a device virtualization bus driver (DVBD), and a device management service (DMS).

Abstract: Systems and methods are provided herein that can facilitate the managed reliability of data storage, including management of device remanufacturing and masking from an operating system a failure or predicted failure of a device running on a computer or a networked cluster of computers having access to the device. The systems and methods may facilitate removal of a device by coordinating among computers or controllers in a network cluster the logical removal of a device. At a later time, a coordinated logical re-introduction of the device to the systems or computers from which the device was logically removed can be performed. This can be accomplished via a virtualization system that may include a device function driver (DFD), a device virtualization bus driver (DVBD), and a device management service (DMS).

Abstract: Systems and methods are provided herein that can facilitate the managed reliability of data storage, including management of device remanufacturing and masking from an operating system a failure or predicted failure of a device running on a computer or a networked cluster of computers having access to the device. The systems and methods may facilitate removal of a device by coordinating among computers or controllers in a network cluster the logical removal of a device. At a later time, a coordinated logical re-introduction of the device to the systems or computers from which the device was logically removed can be performed. This can be accomplished via a virtualization system that may include a device function driver (DFD), a device virtualization bus driver (DVBD), and a device management service (DMS).

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract: A semiconductor device has a semiconductor die and conductive pillar with a recess or protrusion formed over a surface of the semiconductor die. The conductive pillar is made by forming a patterning layer over the semiconductor die, forming an opening with a recess or protrusion in the patterning layer, depositing conductive material in the opening and recess or protrusion, and removing the patterning layer. A substrate has bump material deposited over a conductive layer formed over a surface of the substrate. The bump material is melted. The semiconductor die is pressed toward the substrate to enable the melted bump material to flow into the recess or over the protrusion if the conductive pillar makes connection to the conductive layer. A presence or absence of the bump material in the recess or protrusion of the conductive pillar is detected by X-ray or visual inspection.

Abstract: A semiconductor device has a semiconductor die with composite bump structures over a surface of the semiconductor die. A conductive layer is formed over the substrate. The conductive layer has a channel in an interconnect site of the conductive layer. The channel extends beyond a footprint of the composite bump structures. The semiconductor die is disposed over the substrate. The bump material of the composite bump structures is melted. The composite bump structures are pressed over the interconnect site of the conductive layer so that the melted bump material flows into the channel. Electrical continuity between the composite bump structures and conductive layer is detected by a presence of the bump material in the channel. No electrical continuity between the composite bump structures and conductive layer is detected by an absence of the bump material in the channel. The electrical continuity can be detected by visual inspection or X-ray.