Patents by Inventor Jen-Yuan Chiang

Jen-Yuan Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984465
    Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei Chuang Wu, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Yen-Ting Chiang, Chun-Yuan Chen, Shen-Hui Hong
  • Patent number: 11948949
    Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.
    Type: Grant
    Filed: July 15, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Yuan Chen, Ching-Chun Wang, Hsiao-Hui Tseng, Jen-Cheng Liu, Jhy-Jyi Sze, Shyh-Fann Ting, Wei Chuang Wu, Yen-Ting Chiang, Chia Ching Liao, Yen-Yu Chen
  • Patent number: 9443343
    Abstract: Provided is a method and apparatus for realistically reproducing an eyeball that may verify and analyze a material property and a deformation property with respect to each of constituent portions of an eyeball and may render each of the constituent portions based on the analyzed priorities, thereby more realistically reproducing the eyeball.
    Type: Grant
    Filed: November 23, 2011
    Date of Patent: September 13, 2016
    Assignees: Samsung Electronics Co., Ltd., University of Southern California
    Inventors: Tae Hyun Rhee, Seon Min Rhee, Hyun Jung Shim, Do Kyoon Kim, Abhijeet Ghosh, Jay Busch, Jen-Yuan Chiang, Paul Debevec