Abstract: A full color display panel with a mirror function comprises an organic light-emitting area, a spectrum-modulation layer, a color-separating layer, a transparent substrate and a semi-reflecting layer. The organic light-emitting area includes a plurality of pixels for emitting white light. The spectrum-modulation layer is doped with a fluorescent material and/or a phosphorescent material in a transparent protecting medium. The color-separating layer includes a light-shielding frame and a plurality of color filters. The light-shielding frame is disposed around the peripheral of the color filters. The transparent substrate has a first surface and a second surface opposite to the first surface. The color-separating layer is disposed above the first surface of the transparent substrate. The spectrum-modulation layer is disposed above the color-separating layer. The organic light-emitting area is disposed above the spectrum-modulation layer.

Abstract: A full color display panel with a mirror function comprises an organic light-emitting area, a spectrum-modulation layer, a color-separating layer, a transparent substrate and a semi-reflecting layer. The organic light-emitting area includes a plurality of pixels for emitting white light. The spectrum-modulation layer is doped with a fluorescent material and/or a phosphorescent material in a transparent protecting medium. The color-separating layer includes a light-shielding frame and a plurality of color filters. The light-shielding frame is disposed around the peripheral of the color filters. The transparent substrate has a first surface and a second surface opposite to the first surface. The color-separating layer is disposed above the first surface of the transparent substrate. The spectrum-modulation layer is disposed above the color-separating layer. The organic light-emitting area is disposed above the spectrum-modulation layer.

Abstract: A structure of fabricating high gate performance for NROM technology. The method at least includes the following steps. First of all, a tunnel oxide layer on the silicon substrate. Then, a amorphous silicon layer on the tunnel oxide layer, and a poly-SiGe layer (a polysilicon layer with doped germanium) on the amorphous silicon layer. Next, an interpoly dielectric layer on the poly-SiGe layer. Finally, a polysilicon layer on the interpoly dielectric layer.