Abstract: A substrate drying system for drying substrates after the substrates are washed typically using deionized water, is disclosed. The substrate drying system comprises a substrate cleaning tank in which the substrates are washed. A dry pump is provided in fluid communication with the substrate cleaning tank. A container which contains a supply of a liquid drying fluid, typically isopropyl alcohol (IPA), is further provided in fluid communication with the substrate cleaning tank. In application, the dry pump induces a reduced pressure inside the substrate cleaning tank and the drying fluid container. This reduces the vapor pressure, and thus, the boiling point of the drying fluid, such that the drying fluid is vaporized and remains in a vaporized state throughout transit to the substrate cleaning tank and during drying of the substrate.

Abstract: A new wet processing apparatus is achieved. The apparatus comprises a tank to contain a fluid. A drain opening is included in the tank. A regulating means is disposed in the tank and over the drain opening to control the draining rate and the draining direction of the fluid.

Abstract: A substrate drying system for drying substrates after the substrates are washed typically using deionized water. The substrate drying system comprises a substrate cleaning tank in which the substrates are washed. A dry pump is provided in fluid communication with the substrate cleaning tank. A container which contains a supply of a liquid drying fluid, typically isopropyl alcohol (IPA), is further provided in fluid communication with the substrate cleaning tank. In application, the dry pump induces a reduced pressure inside the substrate cleaning tank and the drying fluid container. This reduces the vapor pressure, and thus, the boiling point of the drying fluid, such that the drying fluid is vaporized and remains in a vaporized state throughout transit to the substrate cleaning tank and during drying of the substrate.

Abstract: Within a plasma processing apparatus and a plasma processing method there is employed interposed between a decoupling capacitor and a radio frequency powered electrode a minimum of two adjustment capacitors. The minimum of two adjustment capacitors provide for enhanced plasma control within the plasma processing apparatus and the plasma processing method.

Abstract: A method for detecting end-point in a plasma etching process by monitoring plasma impedance changes on a time scale is disclosed. In the method, a plasma etching process is first conducted in a process chamber, while changes in a parameter of plasma impedance in the chamber occurring during the etching process is recorded in a curve on a time scale. An end-point of the plasma etching process is then defined for the etching of a specific material layer at a point where the direction of a slope of the curve changes.

Abstract: A method for detecting end-point in a plasma etching process by monitoring plasma impedance changes on a time scale is disclosed. In the method, a plasma etching process is first conducted in a process chamber, while changes in a parameter of plasma impedance in the chamber occurring during the etching process is recorded in a curve on a time scale. An end-point of the plasma etching process is then defined for the etching of a specific material layer at a point where the direction of a slope of the curve changes.