Abstract: A method for evaluating a polymer molecule including linearly connected monomer residues includes providing a polymer molecule in a liquid, contacting the liquid with an insulating solid-state membrane having a detector capable of detecting polymer molecule characteristics, and causing the polymer molecule to traverse a limited region of the solid-state membrane so that monomers of the polymer molecule traverse the limit region in sequential order, whereby the polymer molecule interacts linearly with the detector and data suitable to determine polymer molecule characteristics are obtained. The limited region may be defined by a nanometer-sized aperture in the membrane.

Abstract: A solid state structure having a surface is provided and is exposed to a flux, F, of incident ions.

Abstract: The invention relates to a method for detecting a double-stranded region in a nucleic acid by (1) providing two separate, adjacent pools of a medium and a interface between the two pools, the interface having a channel so dimensioned as to allow sequential monomer-by-monomer passage of a single-stranded nucleic acid, but not of a double-stranded nucleic acid, from one pool to the other pool; (2) placing a nucleic acid polymer in one of the two pools; and (3) taking measurements as each of the nucleotide monomers of the single-stranded nucleic acid polymer passes through the channel so as to differentiate between nucleotide monomers that are hybridized to another nucleotide monomer before entering the channel and nucleotide monomers that are not hybridized to another nucleotide monomer before entering the channel.

Abstract: There is provided controlled fabrication of a solid state structural feature on a solid state structure by exposing the structure to a fabrication process environment the conditions of which are selected to produce a prespecified feature in the structure. A physical detection species is directed toward a designated structure location during process environment exposure of the structure, and the detection species is detected in a trajectory from traversal of the designated structure location, to indicate changing physical dimensions of the prespecified feature. The fabrication process environment is then controlled in response to the physical species detection to fabricate the structural feature.

Abstract: The invention relates to a method for detecting a double-stranded region in a nucleic acid by (1) providing two separate, adjacent pools of a medium and a interface between the two pools, the interface having a channel so dimensioned as to allow sequential monomer-by-monomer passage of a single-stranded nucleic acid, but not of a double-stranded nucleic acid, from one pool to the other pool; (2) placing a nucleic acid polymer in one of the two pools; and (3) taking measurements as each of the nucleotide monomers of the single-stranded nucleic acid polymer passes through the channel so as to differentiate between nucleotide monomers that are hybridized to another nucleotide monomer before entering the channel and nucleotide monomers that are not hybridized to another nucleotide monomer before entering the channel.

Abstract: Arrays of extended crystalline and non-crystalline structures are created using light beams coupled to microscopic polarizable matter. Polarizable matter adopts the pattern of an applied, patterned light intensity distribution. Further, polarizable matter itself scatters applied light, resulting in production of a stable, bound configuration of that matter. Alternatively, polarizable matter can simultaneously adopt the pattern of an applied patterned light intensity while the incident light scattered by the matter itself acts further to organize the matter. Dielectric, semiconductor, metal, molecular, atomic and biological matter can be organized using light to fabricate numerous devices including mechanical and optical filters, self-organizing Bragg lasers, templates for epitaxy, photonic semiconductors, optical components including holograms and diffractive optical elements as well as two dimensional membranes of living biological cells.

Abstract: A tunable monochromator selects a narrow range of wavelengths from a broadband source of radiation, such as a synchrotron X-ray source, visible light, etc. Wavelength selectivity is obtained by Bragg reflection from crystal surfaces or by diffraction gradings, prisms, etc. The inventive apparatus maintains proper orientation of two rotary members, at least one of which is typically a wavelength selective member. The apparatus allows the angles of incidence and reflection to be changed, thus changing the wavelength selected without changing the output angle or height. Two wavelength selective members can be used, or a detector probe may be positioned relative to a single wavelength selective member, or a desired polarization can be obtained with the use of a single wavelength selective member and a quarter wavelength plate. Other devices employing the .theta.-2.theta. principle, including variable delay lines, can be realized with the device.

Abstract: A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.

Abstract: Polycrystalline and amorphous semiconductors can be annealed using a laser or electron beam to restore or obtain crystal order by epitaxial regrowth on a crystal substrate. When the annealing occurs by liquid phase epitaxy, the presence and lifetime of a molten state at the region being annealed can be used to control the annealing process. Various control mechanisms are described.

Abstract: Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.