Patents by Inventor Jene Golovchenko

Jene Golovchenko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7435353
    Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.
    Type: Grant
    Filed: December 9, 2004
    Date of Patent: October 14, 2008
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Gavin M. King, Gregor M. Schürmann, Daniel Branton
  • Publication number: 20080248561
    Abstract: There is provided a first reservoir containing a liquid solution including a molecule to be characterized and a second reservoir for containing a liquid solution including a molecule that has been characterized. A solid state support structure is provided including an aperture having a molecular entrance providing a fluidic connection to the first reservoir and a molecular exit providing a fluidic connection to the second reservoir. One carbon nanotube is provided having a longitudinal sidewall disposed as a molecular contacting surface at the aperture. A voltage source is connected in series with the carbon nanotube for electrically biasing the carbon nanotube, and an electrical current monitor is connected in series with the carbon nanotube for monitoring changes in electrical current through the nanotube corresponding to translocation of a molecule through the aperture.
    Type: Application
    Filed: June 11, 2008
    Publication date: October 9, 2008
    Applicant: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Daniel Branton
  • Publication number: 20080171316
    Abstract: There is provided a first reservoir containing a liquid solution including a molecule to be characterized and a second reservoir for containing a liquid solution including a molecule that has been characterized. A solid state support structure is provided including an aperture having a molecular entrance providing a fluidic connection to the first reservoir and a molecular exit providing a fluidic connection to the second reservoir. First and second electron transport probes are each disposed on the support structure with a surface abutting a perimeter of the aperture. At least one of the probes comprises a fullerene structure, e.g., a carbon nanotube. A voltage source is connected between the probes to apply a voltage bias across the aperture. An electrical current monitor is connected between the probes for monitoring changes in electron transport between the probes corresponding to translocation of a molecule through the aperture.
    Type: Application
    Filed: April 6, 2006
    Publication date: July 17, 2008
    Applicant: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Daniel Branton
  • Publication number: 20070262050
    Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions. The structure can then be processed, with at least a portion of the patterned solid condensate layer on the structure surface, and then the solid condensate layer removed. Further there can be stimulated localized reaction between the solid condensate layer and the structure by directing a beam of energy at at least one selected region of the condensate layer.
    Type: Application
    Filed: December 9, 2004
    Publication date: November 15, 2007
    Inventors: Jene Golovchenko, Gavin King, Gregor Schurmann, Daniel Branton
  • Patent number: 7258838
    Abstract: A solid state nanopore device including two or more materials and a method for fabricating the same. The device includes a solid state insulating membrane having an exposed surface, a conductive material disposed on at least a portion of the exposed surface of the solid state membrane, and a nanopore penetrating an area of the conductive material and at least a portion of the solid state membrane. During fabrication a conductive material is applied on a portion of a solid state membrane surface, and a nanopore of a first diameter is formed. When the surface is exposed to an ion beam, material from the membrane and conductive material flows to reduce the diameter of the nanopore. A method for evaluating a polymer molecule using the solid state nanopore device is also described. The device is contacted with the polymer molecule and the molecule is passed through the nanopore, allowing each monomer of the polymer molecule to be monitored.
    Type: Grant
    Filed: February 14, 2003
    Date of Patent: August 21, 2007
    Assignee: President and Fellows of Harvard College
    Inventors: Jiali Li, Derek M. Stein, Gregor M. Schurmann, Gavin M. King, Jene Golovchenko, Daniel Branton, Michael Aziz
  • Patent number: 7253434
    Abstract: The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.
    Type: Grant
    Filed: June 6, 2005
    Date of Patent: August 7, 2007
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Haibing Peng
  • Publication number: 20070172386
    Abstract: A solid state nanopore device including two or more materials and a method for fabricating the same. The device includes a solid state insulating membrane having an exposed surface, a conductive material disposed on at least a portion of the exposed surface of the solid state membrane, and a nanopore penetrating an area of the conductive material and at least a portion of the solid state membrane. During fabrication a conductive material is applied on a portion of a solid state membrane surface, and a nanopore of a first diameter is formed. When the surface is exposed to an ion beam, material from the membrane and conductive material flows to reduce the diameter of the nanopore. A method for evaluating a polymer molecule using the solid state nanopore device is also described. The device is contacted with the polymer molecule and the molecule is passed through the nanopore, allowing each monomer of the polymer molecule to be monitored.
    Type: Application
    Filed: February 14, 2003
    Publication date: July 26, 2007
    Inventors: Jiali Li, Derek Stein, Gregor Schurmann, Gavin King, Jene Golovchenko, Daniel Branton, Michael Aziz
  • Publication number: 20070128357
    Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.
    Type: Application
    Filed: December 9, 2004
    Publication date: June 7, 2007
    Inventors: Daniel Branton, Jene Golovchenko, Gavin King, Warren MoberlyChan, Gregor Schurmann
  • Patent number: 7118657
    Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: October 10, 2006
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Derek M. Stein, Jiali Li
  • Publication number: 20060006377
    Abstract: The invention provides a carbon nanotube field effect transistor including a nanotube having a length suspended between source and drain electrodes. A gate dielectric material coaxially coats the suspended nanotube length and at least a portion of the source and drain electrodes. A gate metal layer coaxially coats the gate dielectric material along the suspended nanotube length and overlaps a portion of the source and drain electrodes, and is separated from those electrode portions by the gate dielectric material. The nanotube field effect transistor is fabricated by coating substantially the full suspended nanotube length and a portion of the source and drain electrodes with a gate dielectric material. Then the gate dielectric material along the suspended nanotube length and at least a portion of the gate dielectric material on the source and drain electrodes are coated with a gate metal layer.
    Type: Application
    Filed: June 6, 2005
    Publication date: January 12, 2006
    Applicant: President and Fellows of Harvard College
    Inventors: Jene Golovchenko, Haibing Peng
  • Publication number: 20060003458
    Abstract: The invention features methods for evaluating the conformation of a polymer, for example, for determining the conformational distribution of a plurality of polymers and to detect binding or denaturation events. The methods employ a nanopore which the polymer, e.g., a nucleic acid, traverses. As the polymer traverses the nanopore, measurements of transport properties of the nanopore yield data on the conformation of the polymer.
    Type: Application
    Filed: August 16, 2004
    Publication date: January 5, 2006
    Inventors: Jene Golovchenko, Jiali Li, Derek Stein, Marc Gershow
  • Publication number: 20050241933
    Abstract: The invention provides a method for molecular analysis. In the method, sidewalls are formed extending through a structure between two structure surfaces, to define an aperture. A layer of material is deposited on the aperture sidewalls and the two structure surfaces. The aperture with the deposited material layer is then configured in a liquid solution with a gradient in a chemical potential, between the two structure surfaces defining the aperture, that is sufficient to cause molecular translocation through the aperture.
    Type: Application
    Filed: December 17, 2004
    Publication date: November 3, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Daniel Branton, Roy Gordon, Peng Chen, Toshiyuki Mitsui, Damon Farmer, Jene Golovchenko
  • Publication number: 20050126905
    Abstract: The invention provides a method for controlled fabrication of a solid state structural feature. In the method, a solid state structure is provided and the structure is exposed to an ion beam, under fabrication process conditions for producing the structural feature. A physical detection species is directed toward a designated structure location, and the rate at which the detection species proceeds from the designated structure location is measured. Detection species rate measurements are fit to a mathematical model, and the fabrication process conditions are controlled, based on the fitted detection species rate measurements, to fabricate the structural feature.
    Type: Application
    Filed: October 7, 2004
    Publication date: June 16, 2005
    Applicants: President and Fellows of Harvard College, Agilent Technologies, Inc.
    Inventors: Jene Golovchenko, Derek Stein, George Yefchak, Richard Pittaro, Curt Flory
  • Patent number: 6870361
    Abstract: A nano-scale system is provided, and a method of manufacture therefor, including a support material, a nanotube embedded in the support material and an electrical connection to the nanotube.
    Type: Grant
    Filed: December 21, 2002
    Date of Patent: March 22, 2005
    Assignee: Agilent Technologies, Inc.
    Inventors: Nasreen G. Chopra, David Paul Basile, Jene A. Golovchenko
  • Publication number: 20050006224
    Abstract: For controlling a physical dimension of a solid state structural feature, a solid state structure is provided, having a surface and having a structural feature. The structure is exposed to a first periodic flux of ions having a first exposure duty cycle characterized by a first ion exposure duration and a first nonexposure duration for the first duty cycle, and then at a second periodic flux of ions having a second exposure duty cycle characterized by a second ion exposure duration and a second nonexposure duration that is greater than the first nonexposure duration, for the second duty cycle, to cause transport, within the structure including the structure surface, of material of the structure to the structural feature in response to the ion flux exposure to change at least one physical dimension of the feature substantially by locally adding material of the structure to the feature.
    Type: Application
    Filed: October 28, 2003
    Publication date: January 13, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Jene Golovchenko, Derek Stein, Jiali Li
  • Publication number: 20050007002
    Abstract: A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.
    Type: Application
    Filed: October 29, 2003
    Publication date: January 13, 2005
    Applicant: President and Fellows of Harvard College
    Inventors: Jene Golovchenko, Haibing Peng
  • Publication number: 20040229386
    Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.
    Type: Application
    Filed: January 29, 2004
    Publication date: November 18, 2004
    Applicant: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Gregor M. Schurmann, Gavin M. King, Daniel Branton
  • Patent number: 6783643
    Abstract: A solid state structure having a surface is provided and exposed to a flux, F, of incident ions under conditions that are selected based on: ∂ ∂ t ⁢ C ⁡ ( r , t ) = F ⁢   ⁢ Y 1 + D ⁢ ∇ 2 ⁢ C - C τ trap - F ⁢   ⁢ C ⁢   ⁢ &sigm
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: August 31, 2004
    Assignee: President and Fellows of Harvard College
    Inventors: Jene A. Golovchenko, Daniel Branton, Michael J. Aziz, Jiali Li, Derek M. Stein, Ciaran J. McMullan
  • Publication number: 20040121525
    Abstract: A nano-scale system is provided, and a method of manufacture therefor, including a support material, a nanotube embedded in the support material and an electrical connection to the nanotube.
    Type: Application
    Filed: December 21, 2002
    Publication date: June 24, 2004
    Inventors: Nasreen G. Chopra, David Paul Basile, Jene A. Golovchenko
  • Patent number: 6673615
    Abstract: The invention relates to a method for detecting a double-stranded region in a nucleic acid by (1) providing two separate, adjacent pools of a medium and a interface between the two pools, the interface having a channel so dimensioned as to allow sequential monomer-by-monomer passage of a single-stranded nucleic acid, but not of a double-stranded nucleic acid, from one pool to the other pool; (2) placing a nucleic acid polymer in one of the two pools; and (3) taking measurements as each of the nucleotide monomers of the single-stranded nucleic acid polymer passes through the channel so as to differentiate between nucleotide monomers that are hybridized to another nucleotide monomer before entering the channel and nucleotide monomers that are not hybridized to another nucleotide monomer before entering the channel.
    Type: Grant
    Filed: February 20, 2002
    Date of Patent: January 6, 2004
    Assignee: President and Fellows of Harvard College
    Inventors: Timothy J. Denison, Alexis Sauer, Jene Golovchenko, Amit Meller, Eric Brandin, Daniel Branton