Abstract: A power delivery system includes a power sourcing equipment, a powered device and a transmission cable. When the power sourcing equipment is electrically connected to the powered device via the transmission cable, an over-current detecting circuit in the power sourcing equipment is configured to detect over-current occurrence of the powered device. Meanwhile, the power sourcing equipment is configured to determine the functionality of the over-current detecting circuit based on its specific pin and provide single fault protection when the over-current detecting circuit fails.

Abstract: A power delivery system includes a power sourcing equipment, a powered device and a transmission cable. When the power sourcing equipment is electrically connected to the powered device via the transmission cable, an over-current detecting circuit in the power sourcing equipment is configured to detect over-current occurrence of the powered device. Meanwhile, the power sourcing equipment is configured to determine the functionality of the over-current detecting circuit based on its specific pin and provide single fault protection when the over-current detecting circuit fails.

Abstract: A control method is introduced to operate an ACF power converter under a non-complimentary mode. A high-side switch is turned ON at least twice within a switching cycle of a low-side switch, to provide at least two high-side ON times. One of the high-side ON times follows the end of demagnetization time of a transformer in the ACF power converter, and the other follows the end of the blanking time that controls the maximum switching frequency of the low-side switch.

Abstract: A control method is introduced to operate an ACF power converter under a non-complimentary mode. A high-side switch is turned ON at least twice within a switching cycle of a low-side switch, to provide at least two high-side ON times. One of the high-side ON times follows the end of demagnetization time of a transformer in the ACF power converter, and the other follows the end of the blanking time that controls the maximum switching frequency of the low-side switch.

Abstract: A control circuit includes a first control unit, a power unit, a driver unit, a second control unit, a power source, a first switch, a pull-up element and a second switch. The first control unit is used to detect whether a configuration channel line has a predetermined divided voltage and generate a control signal accordingly. The power unit is coupled to the configuration channel line and a power line for supplying power to the driver unit. The driver unit is used to enable or disable a light emitting unit according to the control signal. The second control unit is used to detect whether the configuration channel line has the predetermined divided voltage and control the first switch and the second switch accordingly. The first switch is coupled between a power source and the configuration channel line. The second switch is coupled between the pull-up element and the configuration channel line.

Abstract: A new method of forming a composite etching stop layer is described. An etching stop layer is deposited on a substrate wherein the etching stop layer is selected from the group consisting of: silicon carbide, silicon nitride, SiCN, SiOC, and SiOCN. A TEOS oxide layer is deposited by plasma-enhanced chemical vapor deposition overlying the etching stop layer. The composite etching stop layer has improved moisture resistance, better etching selectivity, and lower dielectric constant than other etching stop layers.

Abstract: A new method of forming a composite etching stop layer is described. An etching stop layer is deposited on a substrate wherein the etching stop layer is selected from the group consisting of: silicon carbide, silicon nitride, SiCN, SiOC, and SiOCN. A TEOS oxide layer is deposited by plasma-enhanced chemical vapor deposition overlying the etching stop layer. The composite etching stop layer has improved moisture resistance, better etching selectivity, and lower dielectric constant than other etching stop layers.

Abstract: A new method of forming a composite etching stop layer is described. An etching stop layer is deposited on a substrate wherein the etching stop layer is selected from the group consisting of: silicon carbide, silicon nitride, SiCN, SiOC, and SiOCN. A TEOS oxide layer is deposited by plasma-enhanced chemical vapor deposition overlying the etching stop layer. The composite etching stop layer has improved moisture resistance, better etching selectivity, and lower dielectric constant than other etching stop layers.