Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.

Abstract: A system for controlling the flow of gases into a reaction chamber used in processing semiconductor devices includes a safety interlock feature that prevents inadvertent mixing of incompatible, reactive gases. The interlock feature is implemented in an interlock control circuit which operates a valve system for individually controlling the flow of separate gases into the chamber. The interlock circuit includes a series of relay switches and timers arranged to create a time delay between the initiation of flow of gases from separate sources into the chamber.

Abstract: A method and apparatus for detecting material accretion and peeling in a system such as a plasma process chamber, including multiple optical sensors which are provided in the chamber above a gas distribution plate or other surface inside the chamber. The optical sensors are connected to a central process controller that is capable of terminating operation of the chamber and may be equipped with an alarm. In the event that the optical sensors detect asymmetries in brightness or light reflection among various portions or regions of the gas distribution plate or other surface, which asymmetries may indicate the formation of a material coating on the plate or dislodging of contaminant particles from the plate, a signal is sent to the process controller, which may be adapted to terminate the plasma process, alert operating personnel, or both.

Abstract: A new and improved insert ring for a wafer support inside a processing chamber for the processing, particularly dry etching, of semiconductor wafer substrates. The insert ring includes a generally convex inner surface which faces the wafer support and defines a gap or berline wall between the insert ring and the wafer support. In one embodiment, the convex inner surface is convexly-tapered. In another embodiment, the convex inner surface is convexly-curved. Throughout etching of multiple successive substrates on the wafer support, accumulations of polymer material on the inner surface of the insert ring are prevented or at least substantially reduced. Consequently, polymer peeling is eliminated or reduced and operational intervals for the processing chamber or system between periodic maintenance or cleanings, are prolonged.

Abstract: A method and apparatus comprising a purge conduit and vent conduit attached to a turbo pump of a plasma etch chamber. The purge conduit may communicate with atmospheric air or with a nitrogen source or clean, dry air (CDA) source, and the vent conduit is fitted with a manual valve, an electric valve, or both, along with a flow restrictor and an end cap provided with an air or gas vent. The air flow restrictor facilitates gradual, rather than rapid, escape of air or gas from the chamber, through the turbo pump and from the vent conduit upon opening a gate valve between the chamber and the turbo, to prevent damage to the internal turbo pump components.

Abstract: A system for controlling the flow of gases into a reaction chamber used in processing semiconductor devices includes a safety interlock feature that prevents inadvertent mixing of incompatible, reactive gases. The interlock feature is implemented in an interlock control circuit which operates a valve system for individually controlling the flow of separate gases into the chamber. The interlock circuit includes a series of relay switches and timers arranged to create a time delay between the initiation of flow of gases from separate sources into the chamber.

Abstract: A method and apparatus comprising a purge conduit and vent conduit attached to a turbo pump of a plasma etch chamber. The purge conduit may communicate with atmospheric air or with a nitrogen source or clean, dry air (CDA) source, and the vent conduit is fitted with a manual valve, an electric valve, or both, along with a flow restrictor and an end cap provided with an air or gas vent. The air flow restrictor facilitates gradual, rather than rapid, escape of air or gas from the chamber, through the turbo pump and from the vent conduit upon opening a gate valve between the chamber and the turbo, to prevent damage to the internal turbo pump components.

Abstract: A cassette pod stage that is equipped with locked guide pins is described. The cassette pod stage of the present invention is provided with at least one aperture therethrough for engaging at least one guide pin. The guide pin is provided with a top portion, a bottom portion and a skirt portion in-between the top portion and the bottom portion for use as a stop during installation of the guide pin through an aperture in the cassette pod stage. The bottom portion of the guide pin is provided with a threaded portion for engaging a locking nut after the guide pin is installed with the threaded portion extending beyond the bottom surface of the cassette pod stage for such engagement.

Abstract: A method and apparatus for detecting material accretion and peeling in a system such as a plasma process chamber, including multiple optical sensors which are provided in the chamber above a gas distribution plate or other surface inside the chamber. The optical sensors are connected to a central process controller that is capable of terminating operation of the chamber and may be equipped with an alarm. In the event that the optical sensors detect asymmetries in brightness or light reflection among various portions or regions of the gas distribution plate or other surface, which asymmetries may indicate the formation of a material coating on the plate or dislodging of contaminant particles from the plate, a signal is sent to the process controller, which may be adapted to terminate the plasma process, alert operating personnel, or both.