Abstract: The present invention relates to a package structure and method for manufacturing the same. The package structure can minimize the area of the circuit board used for packaging, by stacking a passive element directly on a chip. The disclosed package structure comprises: a circuit board having a first surface, where a plurality of first connecting pads being disposed thereon; a chip unit having an active surface, a non-active surface and a plurality of conductive vias, while a plurality of second connecting pads and a plurality of electric pads being disposed on the active surface, and a plurality of third connecting pads being disposed on the non-active surface; a plurality of solder balls electrically connected with the first connecting pads and the second connecting pads; and a passive element being electrically connected with the third connecting pads. The passive element and the chip unit both electrically connect to the chip unit.

Abstract: The present invention discloses a metallization layer structure for flip chip package, which comprises an UBM layer formed on a metal pad, whereby a fine-quality tin-based solder ball can be formed on the metal pad. The UBM layer is a NiZnP layer formed via the reduction and oxidization of a solution containing nickel sulfate (Ni2SO4), zinc sulfate (ZnSO4), sodium dihydrogen phosphite (NaH2PO2), sodium citrate dihydrate (Na3C6H5O7-2H2O), and ammonium chloride (NH4Cl). The present invention replaces the conventional Au/Ni—P dual-layer structure. Therefore, the present invention can decrease the complexity of the process and reduce the cost. Further, the metallization layer structure of the present invention is tough, hard to peel off and highly corrosion-resistant.

Abstract: A method for making Nano-scale lead-free solder includes the following steps of: forming a mixture solution Sn-Ag or Sn-Ag-Cu; making NaBH4, NaOH and alkyl C12H25OSO3Na to a reducing dispersing solution; producing reactant Sn-Ag or Sn-Ag-Cu by means of the oxidation reduction method; and adding 95% ethanol to be mixed, and cleaning the reactant by using a supersonic vibrator for removing boron (B) and sulfur (S) atom which adhere to the reactant, thereby producing the Nano-scale (0.1˜100 nm) lead-free solder Sn-3.5Ag or Sn-3.5Ag-xCu (x=0.2˜1.0).

Abstract: A method for making Nano-scale lead-free solder includes the following steps of: forming a mixture solution Sn—Ag or Sn—Ag—Cu; making NaBH4, NaOH and alkyl C12H25OSO3Na to a reducing dispersing solution; producing reactant Sn—Ag or Sn—Ag—Cu by means of the oxidation reduction method; and adding 95% ethanol to be mixed, and cleaning the reactant by using a supersonic vibrator for removing boron (B) and sulfur (S) atom which adhere to the reactant, thereby producing the Nano-scale (0.1˜100 nm) lead-free solder Sn-3.5Ag or Sn-3.5Ag-xCu (x=0.2˜1.0).