Patents by Inventor Jeng-Guo Feng

Jeng-Guo Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
    Patent number: 8217488
    Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: July 10, 2012
    Assignee: Walsin Lihwa Corporation
    Inventors: Shiue-Lung Chen, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean
  • VERTICAL STRUCTURE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120161175
    Abstract: A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode.
    Type: Application
    Filed: December 27, 2010
    Publication date: June 28, 2012
    Applicant: WALSIN LIHWA CORPORATION
    Inventors: Shiue-Lung CHEN, Jeng-Guo Feng, Cang-Ho Chen, Ching-Hwa Chang Jean
  • GaN Light Emitting Diode and Method for Increasing Light Extraction on GaN Light Emitting Diode Via Sapphire Shaping
    Publication number: 20120012856
    Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.
    Type: Application
    Filed: July 19, 2010
    Publication date: January 19, 2012
    Applicant: WALSIN LIHWA CORPORATION
    Inventors: Shiue-Lung CHEN, Jeng-Guo Feng, Jang-Ho Chen, Ching-Hwa Chang Jean