Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on the aluminum layer; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a dielectric layer; forming an aluminum layer on the dielectric layer; forming a platinum layer on the aluminum layer; performing a first etching process to remove part of the platinum layer and part of the aluminum layer for forming a patterned platinum layer; and performing a second etching process to remove part of the aluminum layer exposed by the patterned platinum layer and part of the dielectric layer.

Abstract: An etching method for manufacturing MEMS devices is provided. The method includes steps of: providing a substrate including a first surface and a second surface opposite to the first surface, wherein a base structure, a sacrificial structure and at least one adhesion layer are arranged on the first surface of the substrate, the adhesion layer is disposed between the base structure and the sacrificial structure, the base structure is disposed between the adhesion layer and the substrate; performing a surface grinding process on the second surface of the substrate; performing a first plasma etching process by using a first mixed gas to remove the sacrificial structure, wherein the first mixed gas includes oxygen and a first nitrogen-based gas; and performing a second plasma etching process by using a second mixed gas to remove the adhesion layer, wherein the second mixed gas includes a second nitrogen-based base gas and a fluorine-based gas.

Abstract: A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.

Abstract: A method of patterning a platinum layer includes the following steps. A substrate is provided. A platinum layer is formed on the substrate. An etching process is performed to pattern the platinum layer, wherein an etchant used in the etching process simultaneously includes at least a chloride-containing gas and at least a fluoride-containing gas.

Abstract: A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.

Abstract: Display devices and methods forming the same. A digitizer sensor board is integrated on an upper substrate or a lower substrate of a display panel to provide a display device. In the display device, the display panel displays images, and the digitizer sensor board is integrated into the display panel to sense position of a position pointer or finger contact on a surface.

Abstract: A method for fabricating an inductor structure or a dual damascene structure includes following steps. First, a dielectric layer is provided. Subsequently, a first etching process is performed on the dielectric layer so as to form a first opening in the dielectric layer. A polymer is also formed in the first opening during the first etching process. Next, a polymer-removing step is performed to remove the polymer. Thereafter, a second etching process is performed on the dielectric layer to form a second opening in the dielectric layer. Furthermore, the first opening and the second opening are filled with a conductive material so as to form an inductor structure or a dual damascene structure.

Abstract: A reworking method for integrated circuit devices includes the following: providing a substrate having a first base layer and a first dielectric layer formed thereon, performing a first dry etching process to remove the first dielectric layer, performing a CMP process to remove the first base layer, and sequentially reforming a second base layer and a second dielectric layer on the substrate. When certain layers on the IC device have hailed an inspection or when quality defects are found, the defective layer is removed according to the provided reworking method.

Abstract: A transflective liquid crystal display and method of fabricating the same. The pixel region of the transflective comprises a thin film transistor, a transmissive electrode, and a reflective electrode, wherein the overlap of the reflective electrode and the transparent electrode composes a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region, and the transparent electrode and the source and the drain regions of the thin film transistor are formed of the same silicon layer.

Abstract: A method for fabricating an inductor structure or a dual damascene structure is disclosed. First, a dielectric layer is provided. Subsequently, a first etching process is performed on the dielectric layer so as to form a first opening in the dielectric layer. A polymer is also formed in the first opening during the first etching process. Next, a polymer-removing step is performed to remove the polymer. Thereafter, a second etching process is performed on the dielectric layer to form a second opening in the dielectric layer. Furthermore, the first opening and the second opening are filled with a conductive material so as to form an inductor structure or a dual damascene structure.

Abstract: A flip-cover mobile phone with cover-on talking capability. The phone has a plurality of buttons on the front surface of the phone but can be hidden away by the cover. The surface of the phone further includes a loudspeaker, a microphone, a communication on/off button and a touch-sensitive screen. Incoming calls can be received simply by pressing the communication on/off button so that talking is possible with the cover on. With the addition of a touch-sensitive screen, the phone may be operated without lifting the flip cover.

Abstract: A many-faceted LCD display, comprising a light guide pipe, a light source, a first optical means, a second optical means, a first LCD panel and a second LCD panel, is disclosed. The light guide pipe comprises a first surface capable and optional of attaching a reflector, a second surface capable and optional of attaching a reflector, a first edge, and a second edge capable and optional of attaching a reflector. The light source is provided at the first edge and capable of generating and emitting light into the light guide pipe. The first optical means is provided on the first surface of the light guide pipe, and the second optical means is provided on the second surface of the light guide pipe. The first LCD panel is provided on the first optical means, and the second LCD panel is provided on the second optical means.

Abstract: A method for fabricating a dual damascene includes a partial etching process, a photoresist layer stripping process, and a blanket etching process. After the blanket etching process, an in-situ dry cleaning process is performed to remove residual polymers resulting from the etching processes.

Abstract: A process for fabricating a micro-optical lens comprises forming a wall post structure on a substrate, coating with a polymeric film on the wall post, then making it adhering over both sides of the wall post structure by a transverse etching on the substrate around the base of posts. After an isolating process and a proper heating treatment, said polymeric film cohering to form a plano-convex lens. By controlling the respective amount of the polymeric film on both sides of said wall post structure, the polymeric film can combine with the wall post structure to form a composite material biconvex micro-lens, plano-convex micro-lens and the like. Alternatively, a single material micro-lens can be formed by imaging the profile of the polymeric micro-lens on the wall post structure via an etching process.

Abstract: The present invention provides a dual-screen liquid crystal display including three substrates. The first substrate has a first surface and a second surface. The first reflector layer, the first liquid crystal layer, the second substrate and the first polarization film are sequentially disposed on the first surface of the first substrate to form the first reflective LCD. The second reflector layer, the second liquid crystal layer, the third substrate and the second polarization film are sequentially disposed on the second surface of the first substrate to form the second reflective LCD.

Abstract: A method for fabricating a dual damascene includes a partial etching process, a photoresist layer stripping process, and a blanket etching process. After the blanket etching process, an in-situ dry cleaning process is performed to remove residual polymers resulting from the etching processes.

Abstract: Display devices and methods forming the same. A digitizer sensor board is integrated on an upper substrate or a lower substrate of a display panel to provide a display device. In the display device, the display panel displays images, and the digitizer sensor board is integrated into the display panel to sense position of a position pointer or finger contact on a surface.

Abstract: An FED using polycrystalline silicon film emitters has a substrate divided into a plurality of pixel regions, a plurality of polycrystalline silicon film emitters disposed within the pixel regions of the substrate, a cathode layer disposed on the substrate, a faceplate disposed above the substrate, and an anode layer disposed between the substrate and the faceplate.

Abstract: This invention relates to a transflective LCD device using different common voltages in the transmissive and reflective regions to present the same gray scale performance on the transmissive and reflective regions. The liquid crystal display device includes a first substrate including a plurality of transmissive regions and a plurality of reflective regions; a transmissive electrode formed on said transmission electrode region; a reflective electrode formed on said reflective regions and connected electrically with said transmissive electrode; a second substrate including a plurality of first common electrodes and a plurality of second common electrodes, wherein said first common electrodes are formed over said transmissive regions, said second common electrodes are formed over said reflective regions, and said first common electrodes are not connected electrically with said second common electrodes; and a liquid crystal layer interposed between said first substrate and said second substrate.