Abstract: An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

Abstract: An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

Abstract: An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

Abstract: A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0?x1<0.4, and 0?y1<0.4. The second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, a chemical formula of the second hole supply layer is Alx2Iny2Ga1-x2-y2N, wherein 0?x2<0.4, 0?y2<0.4, and x1>x2.

Abstract: A reticle pod for accommodating a reticle is provided. The reticle pod comprises a base; a cover; and at least one supporting member. When the reticle is accommodated on the reticle pod, the supporting member abuts against the reticle through a protrusion part; wherein the maximum static friction is constantly greater than a horizontal force applied to the support module from the reticle.

Abstract: An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

Abstract: A reticle pod for accommodating a reticle is provided. The reticle pod comprises a base; a cover; and at least one supporting member. When the reticle is accommodated on the reticle pod, the supporting member abuts against the reticle through a protrusion part; wherein the maximum static friction is constantly greater than a horizontal force applied to the support module from the reticle.

Abstract: A reticle pod is provided for receiving a reticle, the reticle pod comprises: a plurality of positioning modules, which are disposed on at least one vertex portions of a substrate of the reticle pod. The positioning module includes an elastic member, and an abutting member which disposed above the positioning module, wherein when the reticle is received in the reticle pod and the cover of the reticle pod is engaged to the substrate, the cover contacts and provides a downward pressure to the abutting member, and forcing the abutting member to compress the elastic member. The compressed elastic member deforms extensively along a transverse direction and contacts with the reticle.

Abstract: A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0?x1<0.4, and 0?y1<0.4. The second hole supply layer is disposed between the first hole supply layer and the second-type semiconductor layer, a chemical formula of the second hole supply layer is Alx2Iny2Ga1-x2-y2N, wherein 0?x2<0.4, 0?y2<0.4, and x1>x2.

Abstract: A lighting structure includes a substrate, a light emitting diode, a cover unit, and a hollow column. The substrate has a top surface and a rear surface opposite to the top surface. The light emitting diode is disposed on the top surface and is electrically connected to the substrate. The cover unit is disposed on and cooperates with the substrate to define a receiving space in which the light emitting diode is disposed. The hollow column is connected to the rear surface of the substrate and extends in a vertical direction away from the rear surface. The cover unit and the hollow column respectively have a height in the vertical direction, and the height of the hollow column is 2 times to 10 times the height of the cover unit.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Abstract: A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.

Abstract: A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.