Abstract: A portable solar energy collecting device includes a container configured with an accommodating space therein and including a transparent housing. The transparent housing is formed with a vacuum chamber defined between the inner and outer surrounding walls and surrounding the accommodating space. A heat-absorbing unit is disposed in the accommodating space in the container, absorbs solar energy when the housing is irradiated by solar radiation, and converts the solar energy into thermal energy that is accumulated in the accommodating space in the container.

Abstract: A semiconductor static memory cell with two cross-coupled inverters and two transmission gates for coupling two bit lines uses all minimum size (gate length and gate width) MOSFETs to achieve minimum area. This minimum dimension is rendered possible by using a higher threshold voltage for the transmission gate MOSFET than the threshold voltage of pull-down MOSFET of the inverter. Different threshold voltages are obtained with selective ion implantation, different gate oxide thicknesses and/or different gate doping.

Abstract: A semiconductor static memory cell with two cross-coupled inverters and two transmission gates for coupling two bit lines uses all minimum size (gate length and gate width) MOSFETs to achieve minimum area. This minimum dimension is rendered possible by using a higher threshold voltage for the transmission gate MOSFET than the threshold voltage of pull-down MOSFET of the inverter. Different threshold voltages are obtained with selective ion implantation, different gate oxide thicknesses and/or different gate doping.

Abstract: The memory cells of a read-only memory are connected in parallel between adjacent bus-bit lines. The selection of tile sub-bit lines is through a selector logic decoder. The decoder has many rows of MOSFETs connected in series. Only one of MOSFETs in a row between an adjacent bit line bus and a virtual ground bus is active and controllable by a sub-word line selection signal with other MOSFETs non-conducting and connected between two adjacent sub-bit lines. These active MOSFETs in different rows are connected in series. One of these active MOSFETs is coupled to a main bit line, and another of these active MOSFETs is coupled to a virtual ground. When the active MOSFET is open, the main bit line signal and the virtual signal appear between the corresponding memory cells between these two corresponding sub-bit lines and are sensed. With this structure, the accessed memory cell is coupled between the main bit line and the virtual ground line through a number of series MOSFETs.