Patents by Inventor Jeng Ming-Jer

Jeng Ming-Jer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5616233
    Abstract: A method for forming a fluorinated silicon dioxide layer on a silicon substrate is brought about by anodic oxidation at room temperature. The fluorinated silicon dioxide layer may serve as a field oxide layer or the oxide layer of a thin film transistor. The method involves an electrolytic reaction making use of the silicon substrate as an anode and an electrolyte made of a hydrosilicofluoric acid aqueous solution containing the hydrosilicofluoric acid and the water in a volumetric ratio of about 1:1000. The electrolytic reaction is brought about by a current density of about 1 mA/cm.sup.2. The oxide layer is formed on the anode at a rate of 1 .mu.m/hr and is proved to contain a Si-F bond by the FTIR analysis.
    Type: Grant
    Filed: May 1, 1996
    Date of Patent: April 1, 1997
    Assignee: National Science Council
    Inventors: Hwu Jenn-Gwo, Jeng Ming-Jer