Patents by Inventor Jeng Shwang-Ming

Jeng Shwang-Ming has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solution to the problem of copper hillocks
    Patent number: 6734101
    Abstract: A new method of reducing copper hillocks in copper metallization is described. An opening is made through a dielectric layer overlying a substrate on a wafer. A copper layer is formed overlying the dielectric layer and completely filling the opening. The copper layer is polished back to leave the copper layer only within the opening. Copper hillocks are reduced by: coating an oxide layer over the copper layer and the dielectric layer, thereafter heating the wafer using NH3 plasma, and thereafter depositing a capping layer overlying the oxide layer wherein the time lapse between polishing back the copper layer and depositing the capping layer is less than one day (24 hours).
    Type: Grant
    Filed: October 31, 2001
    Date of Patent: May 11, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Tien-I Bao, Jeng Shwang-Ming, Syun-Ming Jang, Chen-Hua Yu, Kuen-Chyr Lee