Abstract: In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.

Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Abstract: In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.

Abstract: Embodiments of method for cooling a wafer are provided. A method for cooling a wafer includes placing the wafer in a processing module via a passage of a seat member. The method also includes moving a closure member toward the seat member in a diagonal manner. The method further includes engaging the seat member and the closure member and placing a portion of the closure member inside the passage. In addition, the method includes performing a process on the wafer in the processing module.

Abstract: Embodiments of method for cooling a wafer are provided. A method for cooling a wafer includes placing the wafer in a processing module via a passage of a seat member. The method also includes moving a closure member toward the seat member in a diagonal manner. The method further includes engaging the seat member and the closure member and placing a portion of the closure member inside the passage. In addition, the method includes performing a process on the wafer in the processing module.

Abstract: A system for decharging a wafer or substrate disposed on an electrostatic chuck, includes a capacitance detector for measuring a capacitance between the electrostatic chuck and the wafer or substrate, and a decharging voltage calculator for calculating a decharging voltage based at least in part on the capacitance measured by the capacitance detector. The decharging voltage calculated by the decharging voltage calculator of the system is applied to the electrostatic chuck after dechucking to substantially neutralize electrostatic charges on the wafer or substrate.

Abstract: A system for decharging a wafer or substrate disposed on an electrostatic chuck, includes a capacitance detector for measuring a capacitance between the electrostatic chuck and the wafer or substrate, and a decharging voltage calculator for calculating a decharging voltage based at least in part on the capacitance measured by the capacitance detector. The decharging voltage calculated by the decharging voltage calculator of the system is applied to the electrostatic chuck after dechucking to substantially neutralize electrostatic charges on the wafer or substrate.

Abstract: A system for controlling the flow of gases into a reaction chamber used in processing semiconductor devices includes a safety interlock feature that prevents inadvertent mixing of incompatible, reactive gases. The interlock feature is implemented in an interlock control circuit which operates a valve system for individually controlling the flow of separate gases into the chamber. The interlock circuit includes a series of relay switches and timers arranged to create a time delay between the initiation of flow of gases from separate sources into the chamber.

Abstract: Detecting blade vibration via ultrasonic waves is disclosed. The blade may be part of a robot that is used in conjunction with semiconductor device fabrication. A process chamber is provided that has a sidewall and a base defining a cavity contained therein. A rotatable blade is mounted at a center of the cavity that has a base portion and a tip portion extensible from the center to the sidewall of the process chamber. One or more ultrasonic sensors are mounted on the base adjacent to the sidewall. Ultrasonic waves are sent and received toward and reflected by the tip portion of the wafer blade to determine the tip portion's position. In this way, vibrational movement of the blade can be detected.

Abstract: A system for controlling the flow of gases into a reaction chamber used in processing semiconductor devices includes a safety interlock feature that prevents inadvertent mixing of incompatible, reactive gases. The interlock feature is implemented in an interlock control circuit which operates a valve system for individually controlling the flow of separate gases into the chamber. The interlock circuit includes a series of relay switches and timers arranged to create a time delay between the initiation of flow of gases from separate sources into the chamber.

Abstract: Detecting blade vibration via ultrasonic waves is disclosed. The blade may be part of a robot that is used in conjunction with semiconductor device fabrication. A process chamber is provided that has a sidewall and a base defining a cavity contained therein. A rotatable blade is mounted at a center of the cavity that has a base portion and a tip portion extensible from the center to the sidewall of the process chamber. One or more ultrasonic sensors are mounted on the base adjacent to the sidewall. Ultrasonic waves are sent and received toward and reflected by the tip portion of the wafer blade to determine the tip portion's position. In this way, vibrational movement of the blade can be detected.