Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor.

Abstract: An organic floating gate memory device having protein and a method of fabricating the same are disclosed.

Abstract: A circuit board and a method for manufacturing the same are disclosed. The circuit board of the present invention comprises: a carrier board, wherein a first circuit layer is disposed on at least one surface of the carrier board, and the first circuit layer comprises plural conductive pads; a protein dielectric layer disposed on the surface of the carrier board and the first circuit layer, wherein the protein dielectric layer has plural openings to expose the conductive pads; and a second circuit layer disposed on a surface of the protein dielectric layer, wherein the second circuit layer comprises plural first conductive vias, and each first conductive via is correspondingly formed in the opening and electrically connects to the conductive pad.

Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

Abstract: An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

Abstract: An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.

Abstract: An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: The present invention relates to a Schottky diode with a diamond rod, which comprises: a substrate with a gate layer formed thereon; a patterned insulating layer disposed on the gate layer, wherein the patterned insulating layer comprises a first contact region and a second contact region; a diamond rod disposed on the patterned insulating layer, wherein a first end of the diamond rod connects to the first contact region, and a second end of the diamond rod connects to the second contact region; a first electrode corresponding to the first contact region of the patterned insulating layer, and covering the first end of the diamond rod; and a second electrode corresponding to the second contact region of the patterned insulating layer, and covering the second end of the diamond rod, and a method for manufacturing the same.

Abstract: An organic thin film transistor (OTFT) using paper as a substrate and silk protein as an insulating material and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a paper substrate; a gate disposed on the paper substrate; a gate insulating layer containing silk protein, which is disposed on the paper substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Abstract: An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.

Abstract: An organic thin film transistor (OTFT) and a metal-insulator-metal (MIM) capacitor using silk protein as a dielectric material, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate electrode; an organic semiconductor layer; and a source electrode and a drain electrode, wherein the organic semiconductor layer, the source electrode and the drain electrode are disposed over the gate insulating layer.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: The present invention relates to a method for fabricating an organic thin film transistor, including: (A) providing a gate electrode; (B) forming a gate insulating layer on the gate electrode; and (C) forming an organic active layer, a source electrode and a drain electrode over the gate insulating layer, and increasing crystallinity of the organic active layer by irradiating the organic active layer. Accordingly, through irradiation, the present invention can efficiently enhance the field effect mobility, and thereby significantly improves the device performance of an organic thin film transistor. Additionally, irradiation mentioned in the present invention also can be used for repairing an organic thin film transistor.

Abstract: An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost.

Abstract: A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X ° C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y ° C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z ° C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W ° C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X<Y?Z?W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.

Abstract: A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X ° C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y ° C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z ° C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W ° C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X<Y?Z?W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.

Abstract: A vertical aligned nano-scale diamond structure comprising diamond nanotip or nanotube is provided. More particularly, apparatus and method are disclosed for depositing such diamond structure on a rugged polycrystalline substrate.

Abstract: A method of improving efficiency of solar cells made of crystalline silicon, including monocrystalline silicon, multicrystalline silicon and polycrystalline silicon is provided. In the method, a negative bias pulse is applied to solar cells at a predetermined voltage, a predetermined frequency, and a predetermined pulse width while immersing the solar cells in a hydrogen plasma. Hydrogen ions are attracted and quickly implanted into the solar cells. Thus, the passivation of crystal defects in the solar cells can be realized in a short period. Meanwhile, the properties of an antireflection layer cannot be damaged as proper operating parameters are used. Consequently, the serious resistance of the solar cells can be significantly reduced and the filling factor increases as a result. Further, the short-circuit current and the open-circuit voltage can be increased. Therefore, the efficiency can be enhanced.