Patents by Inventor Jenn-Fang Chen

Jenn-Fang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer
    Patent number: 7981711
    Abstract: A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: July 19, 2011
    Assignee: National Chiao Tung University
    Inventors: Wei-I Lee, Jenn-Fang Chen, Chen-Hao Chiang
  • MANUFACTURE METHOD OF MULTILAYER STRUCTURE HAVING NON-POLAR A-PLANE III-NITRIDE LAYER
    Publication number: 20100193843
    Abstract: A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.
    Type: Application
    Filed: May 19, 2009
    Publication date: August 5, 2010
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Wei-I Lee, Jenn-Fang Chen, Chen-Hao Chiang