Abstract: The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.

Abstract: The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.

Abstract: A piezoelectric energy harvesting apparatus includes a housing and a piezoelectric module disposed in the housing. The piezoelectric module includes a piezoelectric wafer unit and a clamp unit clamping the piezoelectric wafer unit. A resilient member is connected between the clamp unit and an inner wall of the housing to transmit an oscillation movement to the clamp unit, which in turn causes oscillation of the piezoelectric wafer unit for generating an electric power. An impact unit extends movably into the housing and is capable of pushing the clamp unit against the resilient member when being subjected to an ambient natural force such that the resilient member generates the oscillation movement.

Abstract: A piezoelectric energy harvesting apparatus includes a housing and a piezoelectric module disposed in the housing. The piezoelectric module includes a piezoelectric wafer unit and a clamp unit clamping the piezoelectric wafer unit. A resilient member is connected between the clamp unit and an inner wall of the housing to transmit an oscillation movement to the clamp unit, which in turn causes oscillation of the piezoelectric wafer unit for generating an electric power. An impact unit extends movably into the housing and is capable of pushing the clamp unit against the resilient member when being subjected to an ambient natural force such that the resilient member generates the oscillation movement.

Abstract: A method for forming well-aligned metallic nanowires includes: (a) providing a substrate formed with a crystal layer thereon; (b) disposing the substrate in such a manner that the crystal layer faces downwardly; (c) applying a metal salt solution, which contains metal ions therein, to the crystal layer on the substrate; and (d) subjecting the metal ions in the metal salt solution on the crystal of TiO2 layer to a reduction treatment, thereby resulting in reduced metal that grows downward toward earth's gravity.

Abstract: A method for forming well-aligned metallic nanowires includes: (a) providing a substrate formed with a crystal layer thereon; (b) disposing the substrate in such a manner that the crystal layer faces downwardly; (c) applying a metal salt solution, which contains metal ions therein, to the crystal layer on the substrate; and (d) subjecting the metal ions in the metal salt solution on the crystal of TiO2 layer to a reduction treatment, thereby resulting in reduced metal that grows downward toward earth's gravity.