Patents by Inventor Jenn-Yu Kao

Jenn-Yu Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5300791
    Abstract: A light emitting diode is provided with a window layer of ZnSSe semiconductor material having a second conductivity type. The second conductivity type ZnSSe window layer has a low electrical resistivity so that it can be used as a current spreading layer, and a bandgap higher than that of the active layer so that it is transparent to light emitted from the active layers. The second conductivity type ZnSSe window layer can be doped with a donor concentration of more than 10.sup.18 cm.sup.-3. Furthermore, its lattice constant is close to that of the active layers and confining layers so that deterioration in optical characteristic due to lattice mismatch is minimized.
    Type: Grant
    Filed: September 29, 1992
    Date of Patent: April 5, 1994
    Assignee: Industrial Technology Research Institute
    Inventors: Tzer-Perng Chen, Chin-Yuan Chen, Jyi-Ren Deng, Ming-Jiunn Jou, Biing-Jye Lee, Jenn-Yu Kao