Patents by Inventor Jenn Yue Wang
Jenn Yue Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230109912Abstract: Embodiments disclosed herein include a method of etching a 3D structure. In an embodiment, the method comprises providing the 3D structure in a microwave plasma chamber. In an embodiment, the 3D structure comprises a substrate, and alternating layers of silicon oxide and silicon nitride over the substrate. In an embodiment, the method further comprises flowing a first gas into the microwave plasma chamber, where the first gas comprises sulfur and fluorine. In an embodiment, the method comprises flowing a second gas into the microwave plasma chamber, where the second gas comprises an inert gas. In an embodiment, the method further comprises striking a plasma in the microwave plasma chamber, and etching the silicon nitride, where an etching selectivity of silicon nitride to silicon oxide is 50:1 or greater.Type: ApplicationFiled: September 6, 2022Publication date: April 13, 2023Inventors: Thai Cheng Chua, CHRISTIAN VALENCIA, DOREEN YONG, TUCK FOONG KOH, JENN-YUE WANG, PHILIP ALLAN KRAUS
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Patent number: 11355391Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.Type: GrantFiled: February 27, 2020Date of Patent: June 7, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Feiyue Ma, Kai Wu, Yu Lei, Kazuya Daito, Yi Xu, Vikash Banthia, Mei Chang, He Ren, Raymond Hoiman Hung, Yakuan Yao, Avgerinos V. Gelatos, David T. Or, Jing Zhou, Guoqiang Jian, Chi-Chou Lin, Yiming Lai, Jia Ye, Jenn-Yue Wang
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Patent number: 11162170Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.Type: GrantFiled: January 19, 2015Date of Patent: November 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Alan A. Ritchie, Zhenbin Ge, Jenn Yue Wang, Sally Lou
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Publication number: 20200303250Abstract: The present disclosure generally relates to methods for processing of substrates, and more particularly relates to methods for forming a metal gapfill. In one implementation, the method includes forming a metal gapfill in an opening using a multi-step process. The multi-step process includes forming a first portion of the metal gapfill, performing a sputter process to form one or more layers on one or more side walls, and growing a second portion of the metal gapfill to fill the opening with the metal gapfill. The metal gapfill formed by the multi-step process is seamless, and the one or more layers formed on the one or more side walls seal any gaps or defects between the metal gapfill and the side walls. As a result, fluids utilized in subsequent processes do not diffuse through the metal gapfill.Type: ApplicationFiled: February 27, 2020Publication date: September 24, 2020Inventors: Xi CEN, Feiyue MA, Kai WU, Yu LEI, Kazuya DAITO, Yi XU, Vikash BANTHIA, Mei CHANG, He REN, Raymond Hoiman HUNG, Yakuan YAO, Avgerinos V. GELATOS, David T. OR, Jing ZHOU, Guoqiang JIAN, Chi-Chou LIN, Yiming LAI, Jia YE, Jenn-Yue WANG
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Publication number: 20180145034Abstract: Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.Type: ApplicationFiled: November 20, 2017Publication date: May 24, 2018Inventors: Yi Xu, Feiyue Ma, Yu Lei, Kazuya Daito, Vikash Banthia, Kai Wu, Jenn Yue Wang, Mei Chang
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Patent number: 9929055Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.Type: GrantFiled: December 27, 2016Date of Patent: March 27, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Dube, Hua Chung, Jenn-Yue Wang, Xuebin Li, Yi-Chiau Huang, Schubert S. Chu
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Publication number: 20170178962Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.Type: ApplicationFiled: December 27, 2016Publication date: June 22, 2017Inventors: Abhishek DUBE, Hua CHUNG, Jenn-Yue WANG, Xuebin LI, Yi-Chiau HUANG, Schubert S. CHU
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Patent number: 9530638Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.Type: GrantFiled: September 30, 2015Date of Patent: December 27, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Abhishek Dube, Hua Chung, Jenn-Yue Wang, Xuebin Li, Yi-Chiau Huang, Schubert S. Chu
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Publication number: 20160126093Abstract: Implementations of the present disclosure generally relate to methods for epitaxial growth of a silicon material on an epitaxial film. In one implementation, the method includes forming an epitaxial film over a semiconductor fin, wherein the epitaxial film includes a top surface having a first facet and a second facet, and forming an epitaxial layer on at least the top surface of the epitaxial film by alternatingly exposing the top surface to a first precursor gas comprising one or more silanes and a second precursor gas comprising one or more chlorinated silanes at a temperature of about 375° C. to about 450° C. and a chamber pressure of about 5 Torr to about 20 Torr.Type: ApplicationFiled: September 30, 2015Publication date: May 5, 2016Inventors: Abhishek DUBE, Hua CHUNG, Jenn-Yue WANG, Xuebin LI, Yi-Chiau HUANG, Schubert S. CHU
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Publication number: 20150221486Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.Type: ApplicationFiled: January 19, 2015Publication date: August 6, 2015Inventors: ALAN A. RITCHIE, ZHENBIN GE, JENN YUE WANG, SALLY LOU
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Patent number: 8293647Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.Type: GrantFiled: November 18, 2009Date of Patent: October 23, 2012Assignee: Applied Materials, Inc.Inventors: Jenn-Yue Wang, Hua Chung, Rong Tao, Hong Zhang
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Publication number: 20100130007Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.Type: ApplicationFiled: November 18, 2009Publication date: May 27, 2010Applicant: APPLIED MATERIALS, INC.Inventors: JENN-YUE WANG, Hua Chung, Rong Tao, Hong Zhang
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Patent number: 7659204Abstract: A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.Type: GrantFiled: March 26, 2007Date of Patent: February 9, 2010Assignee: Applied Materials, Inc.Inventors: Xianmin Tang, Hua Chung, Rongjun Wang, Praburam Gopalraja, Jick M. Yu, Jenn Yue Wang
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Publication number: 20080254613Abstract: Methods for forming a metal interconnection structure in thin-film transistor applications are provided in the present invention. In one embodiment, the method may include providing a substrate into a processing chamber, supplying a first gas mixture into the chamber to deposit a metal layer on the substrate, and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. In another embodiment, a metal interconnection structure may include a substrate, a first barrier layer disposed on the substrate, a metal layer disposed on the substrate in a processing chamber, a second barrier layer disposed on the metal layer formed in the processing chamber a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices.Type: ApplicationFiled: April 10, 2007Publication date: October 16, 2008Inventors: Yanping Li, Hien-Minh Le, Hong Zhang, Jenn Yue Wang
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Publication number: 20080237029Abstract: A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.Type: ApplicationFiled: March 26, 2007Publication date: October 2, 2008Applicant: Applied Materials, Inc.Inventors: Xianmin TANG, Hua Chung, Rongjun Wang, Praburam Gopalraja, Jick M. Yu, Jenn Yue Wang