Patents by Inventor Jennifer A. Bardwell

Jennifer A. Bardwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for etching gallium nitride compound based semiconductors
    Patent number: 6605548
    Abstract: A method for wet etching a gallium nitride compound-based semiconductor is disclosed. The method uses an aqueous solution containing an oxidizing agent such as peroxydisulfate ions. The sample and solution are irradiated with visible or ultraviolet light in order to promote the etching.
    Type: Grant
    Filed: May 30, 2000
    Date of Patent: August 12, 2003
    Assignee: National Research Council of Canada
    Inventor: Jennifer Bardwell
  • GaN selective growth on SiC substrates by ammonia-source MBE
    Patent number: 6599361
    Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: July 29, 2003
    Assignee: National Research Council of Canada
    Inventors: Haipeng Tang, James B. Webb, Jennifer A. Bardwell
  • GaN selective growth on SiC substrates by ammonia-source MBE
    Publication number: 20020189534
    Abstract: A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.
    Type: Application
    Filed: June 18, 2001
    Publication date: December 19, 2002
    Inventors: Haipeng Tang, James B. Webb, Jennifer A. Bardwell