Patents by Inventor Jennifer C. Clark

Jennifer C. Clark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer backside defectivity clean-up utilizing selective removal of substrate material
    Patent number: 8835289
    Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: September 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Jennifer C. Clark, Emily R. Kinser, Ian D. Melville, Candace A. Sullivan
  • WAFER BACKSIDE DEFECTIVITY CLEAN-UP UTILIZING SELECTIVE REMOVAL OF SUBSTRATE MATERIAL
    Publication number: 20130273743
    Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
    Type: Application
    Filed: June 12, 2013
    Publication date: October 17, 2013
    Inventors: Jennifer C. Clark, Emily R. Kinser, Ian D. Melville, Candace A. Sullivan
  • Wafer backside defectivity clean-up utilizing selective removal of substrate material
    Patent number: 8486814
    Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: July 16, 2013
    Assignee: International Business Machines Corporation
    Inventors: Jennifer C. Clark, Emily R. Kinser, Ian D. Melville, Candace A. Sullivan
  • WAFER BACKSIDE DEFECTIVITY CLEAN-UP UTILIZING SLECTIVE REMOVAL OF SUBSTRATE MATERIAL
    Publication number: 20130020682
    Abstract: A wafer and a fabrication method include a base structure including a substrate for fabricating semiconductor devices. The base structure includes a front side where the semiconductor devices are formed and a back side opposite the front side. An integrated layer is formed in the back side of the base structure including impurities configured to alter etch selectivity relative to the base structure such that the integrated layer is selectively removable from the base structure to remove defects incurred during fabrication of the semiconductor devices.
    Type: Application
    Filed: July 21, 2011
    Publication date: January 24, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jennifer C. Clark, Emily R. Kinser, Ian D. Melville, Candace A. Sullivan