Patents by Inventor Jennifer Duc

Jennifer Duc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Super surge diodes
    Patent number: 8952481
    Abstract: The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a Schottky diode and even more preferably a Silicon Carbide (SiC) Schottky diode. However, the semiconductor device may more generally be any type of semiconductor device having a Schottky contact such as, for example, a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: February 10, 2015
    Assignee: Cree, Inc.
    Inventors: Qingchun Zhang, Jennifer Duc
  • SUPER SURGE DIODES
    Publication number: 20140138705
    Abstract: The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the semiconductor device is a Schottky diode and even more preferably a Silicon Carbide (SiC) Schottky diode. However, the semiconductor device may more generally be any type of semiconductor device having a Schottky contact such as, for example, a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET).
    Type: Application
    Filed: November 20, 2012
    Publication date: May 22, 2014
    Applicant: CREE, INC.
    Inventors: Qingchun Zhang, Jennifer Duc
  • Methods of forming semiconductor contacts
    Patent number: 8357571
    Abstract: Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.
    Type: Grant
    Filed: September 10, 2010
    Date of Patent: January 22, 2013
    Assignee: Cree, Inc.
    Inventors: Fabian Radulescu, Jennifer Gao, Jennifer Duc, Scott Sheppard
  • Methods of Forming Semiconductor Contacts and Related Semiconductor Devices
    Publication number: 20120119260
    Abstract: Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided.
    Type: Application
    Filed: September 10, 2010
    Publication date: May 17, 2012
    Inventors: Fabian Radulescu, Jennifer Gao, Jennifer Duc, Scott Sheppard