Patents by Inventor Jennifer Kopp

Jennifer Kopp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step
    Patent number: 6573181
    Abstract: A method of forming a contact in an integrated circuit including forming a dielectric layer over a silicon substrate, etching a contact hole through the dielectric layer, exposing the etched contact hole to a plasma formed from a preclean gas comprising nitrogen trifluoride and helium and, thereafter, depositing a titanium layer within the contact hole by a plasma CVD process, where the plasma CVD process heats the substrate to a temperature less than or equal to 650° C.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: June 3, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Ramanujapuram A. Srinivas, Mohan K. Bhan, Jennifer Kopp