Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead.

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.

Abstract: A dual-temperature, multi-plenum showerhead for use in semiconductor processing equipment is described. The showerhead may supply multiple separate gases to a wafer reaction area while keeping the gases largely segregated within the showerhead. Additionally, the showerhead may be configured to allow a faceplate of the showerhead to be maintained at a significantly higher temperature than the rest of the showerhead.

Abstract: An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a faceplate assembly. The faceplate assembly may include a radical diffuser plate, a precursor delivery plate, and a thermal isolator interposed between the radical diffuser plate and the precursor delivery plate. The faceplate assembly may have a pattern of radical through-holes with centerlines substantially perpendicular to the radical diffuser plate. The thermal isolator may be configured to regulate heat flow between the radical diffuser plate and the precursor delivery plate.